TPS1100DR

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

JEDEC-95 Code :

MS-012AA

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

2V

Height :

1.75mm

Number of Terminations :

8

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

Contact Plating :

Gold

Pin Count :

8

Turn-Off Delay Time :

13 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

15V

Number of Pins :

8

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Rise Time :

10ns

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation :

791mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Turn On Delay Time :

4.5 ns

Factory Lead Time :

6 Weeks

Length :

4.9mm

Width :

3.91mm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Base Part Number :

TPS1100

Transistor Element Material :

SILICON

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-609 Code :

e4

FET Type :

P-Channel

Power Dissipation-Max :

791mW Ta

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.4Ohm

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Thickness :

1.58mm

Continuous Drain Current (ID) :

1.6A

Fall Time (Typ) :

10 ns

Vgs (Max) :

+2V, -15V

ECCN Code :

EAR99