TPS1100D
- Mfr.Part #
- TPS1100D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 1.6A 8SOIC
- Stock
- 10,612
- In Stock :
- 10,612
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 10 ns
- Packaging :
- Tube
- Power Dissipation-Max :
- 791mW Ta
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Height :
- 1.75mm
- Termination :
- SMD/SMT
- Base Part Number :
- TPS1100
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Thickness :
- 1.58mm
- Vgs (Max) :
- +2V, -15V
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 4.9mm
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.5A, 10V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Width :
- 3.91mm
- Gate Charge (Qg) (Max) @ Vgs :
- 5.45nC @ 10V
- Radiation Hardening :
- No
- JESD-609 Code :
- e4
- Drain to Source Breakdown Voltage :
- -15V
- Gate to Source Voltage (Vgs) :
- 2V
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 10ns
- Drain to Source Voltage (Vdss) :
- 15V
- FET Type :
- P-Channel
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Current Rating :
- -1.6A
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- -1.6A
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Operating Temperature :
- -40°C~150°C TJ
- Nominal Vgs :
- -1.25 V
- Voltage - Rated DC :
- -15V
- Pin Count :
- 8
- Turn On Delay Time :
- 4.5 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Number of Terminations :
- 8
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 13 ns
- Output Voltage :
- -15V
- Power Dissipation :
- 791mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 180mOhm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- Max Output Current :
- 1.6A
- Pbfree Code :
- yes
- Datasheets
- TPS1100D

P-Channel Tube 180m Ω @ 1.5A, 10V +2V, -15V 5.45nC @ 10V 15V 8-SOIC (0.154, 3.90mm Width)
TPS1100D Description
TPS1100 is a single P channel enhanced MOSFET. The device uses Texas Instruments' LinBiCMOS process and has been optimized for 3V or 5V power distribution in the battery power supply system. The maximum VGS (Th) of the TPS1100 is-1.5 V and the IDSS is only 0.5 μ A, making it an ideal high-end switch for low-voltage portable battery management systems that maximize battery life. The TPS1100's low RDS (conduction) and excellent AC characteristics (typical rise time of 10 ns) make it a reasonable choice for low-voltage switching applications such as pulse width modulation (PWM) controllers or power switches for motor / bridge drivers. The ultra-thin shrinking small profile package or TSSOP (PW) version has a smaller footprint and lower height, making it suitable for other P-channel MOSFET incompetent areas. Size advantage is particularly important when circuit board real estate is at a premium and height restrictions do not allow small outline integrated circuit (SOIC) packaging.
TPS1100D Features
Low rDS(on) . . . 0.18 ? Typ at VGS = –10 V
3 V Compatible
Requires No External VCC
TTL and CMOS Compatible Inputs
VGS(th) = –1.5 V Max
Available in Ultrathin TSSOP Package (PW)
ESD Protection Up to 2 kV Per
MIL-STD-883C, Method 3015
TPS1100D Applications
battery power supply system
pulse width modulation (PWM) controllers
power switches
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