TPS1100D

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-1.6A

Turn On Delay Time :

4.5 ns

Factory Lead Time :

6 Weeks

Power Dissipation-Max :

791mW Ta

Pin Count :

8

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Thickness :

1.58mm

REACH SVHC :

No SVHC

Resistance :

180mOhm

Base Part Number :

TPS1100

FET Type :

P-Channel

Packaging :

Tube

Pbfree Code :

yes

JESD-609 Code :

e4

Terminal Form :

Gull wing

Length :

4.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Output Voltage :

-15V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

10ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Width :

3.91mm

Operating Temperature :

-40°C~150°C TJ

Voltage - Rated DC :

-15V

Height :

1.75mm

Power Dissipation :

791mW

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Radiation Hardening :

No

Vgs (Max) :

+2V, -15V

Fall Time (Typ) :

10 ns

Drain to Source Voltage (Vdss) :

15V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Max Output Current :

1.6A

Termination :

SMD/SMT

Mount :

Surface Mount

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Number of Elements :

1

Current Rating :

-1.6A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

2V

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

ECCN Code :

EAR99

Turn-Off Delay Time :

13 ns

Nominal Vgs :

-1.25 V