TPS1100D
- Mfr.Part #
- TPS1100D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 1.6A 8SOIC
- Stock
- 10,612
- In Stock :
- 10,612
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 3.91mm
- Drain to Source Breakdown Voltage :
- -15V
- Voltage - Rated DC :
- -15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Pbfree Code :
- yes
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Thickness :
- 1.58mm
- Gate Charge (Qg) (Max) @ Vgs :
- 5.45nC @ 10V
- Base Part Number :
- TPS1100
- Operating Temperature :
- -40°C~150°C TJ
- Height :
- 1.75mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.9mm
- FET Type :
- P-Channel
- Nominal Vgs :
- -1.25 V
- Power Dissipation-Max :
- 791mW Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Code :
- e4
- Turn-Off Delay Time :
- 13 ns
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.5A, 10V
- Output Voltage :
- -15V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Resistance :
- 180mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -1.6A
- Vgs (Max) :
- +2V, -15V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Turn On Delay Time :
- 4.5 ns
- Drain to Source Voltage (Vdss) :
- 15V
- Mount :
- Surface Mount
- Factory Lead Time :
- 6 Weeks
- Continuous Drain Current (ID) :
- -1.6A
- Max Output Current :
- 1.6A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 791mW
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 10 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Rise Time :
- 10ns
- Gate to Source Voltage (Vgs) :
- 2V
- Termination :
- SMD/SMT
- Pin Count :
- 8
- Datasheets
- TPS1100D

P-Channel Tube 180m Ω @ 1.5A, 10V +2V, -15V 5.45nC @ 10V 15V 8-SOIC (0.154, 3.90mm Width)
TPS1100D Description
TPS1100 is a single P channel enhanced MOSFET. The device uses Texas Instruments' LinBiCMOS process and has been optimized for 3V or 5V power distribution in the battery power supply system. The maximum VGS (Th) of the TPS1100 is-1.5 V and the IDSS is only 0.5 μ A, making it an ideal high-end switch for low-voltage portable battery management systems that maximize battery life. The TPS1100's low RDS (conduction) and excellent AC characteristics (typical rise time of 10 ns) make it a reasonable choice for low-voltage switching applications such as pulse width modulation (PWM) controllers or power switches for motor / bridge drivers. The ultra-thin shrinking small profile package or TSSOP (PW) version has a smaller footprint and lower height, making it suitable for other P-channel MOSFET incompetent areas. Size advantage is particularly important when circuit board real estate is at a premium and height restrictions do not allow small outline integrated circuit (SOIC) packaging.
TPS1100D Features
Low rDS(on) . . . 0.18 ? Typ at VGS = –10 V
3 V Compatible
Requires No External VCC
TTL and CMOS Compatible Inputs
VGS(th) = –1.5 V Max
Available in Ultrathin TSSOP Package (PW)
ESD Protection Up to 2 kV Per
MIL-STD-883C, Method 3015
TPS1100D Applications
battery power supply system
pulse width modulation (PWM) controllers
power switches
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