TPS1100D
- Mfr.Part #
- TPS1100D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 1.6A 8SOIC
- Stock
- 10,612
- In Stock :
- 10,612
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 180mOhm
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- JESD-609 Code :
- e4
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.5A, 10V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Operating Temperature :
- -40°C~150°C TJ
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- -15V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Voltage - Rated DC :
- -15V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- +2V, -15V
- Turn-Off Delay Time :
- 13 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- Thickness :
- 1.58mm
- Drain to Source Voltage (Vdss) :
- 15V
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- -1.6A
- Output Voltage :
- -15V
- Power Dissipation :
- 791mW
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- P-Channel
- Width :
- 3.91mm
- Power Dissipation-Max :
- 791mW Ta
- Base Part Number :
- TPS1100
- Length :
- 4.9mm
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Nominal Vgs :
- -1.25 V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 2V
- Gate Charge (Qg) (Max) @ Vgs :
- 5.45nC @ 10V
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Height :
- 1.75mm
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Termination :
- SMD/SMT
- Max Output Current :
- 1.6A
- Turn On Delay Time :
- 4.5 ns
- Fall Time (Typ) :
- 10 ns
- Current Rating :
- -1.6A
- Rise Time :
- 10ns
- Datasheets
- TPS1100D

P-Channel Tube 180m Ω @ 1.5A, 10V +2V, -15V 5.45nC @ 10V 15V 8-SOIC (0.154, 3.90mm Width)
TPS1100D Description
TPS1100 is a single P channel enhanced MOSFET. The device uses Texas Instruments' LinBiCMOS process and has been optimized for 3V or 5V power distribution in the battery power supply system. The maximum VGS (Th) of the TPS1100 is-1.5 V and the IDSS is only 0.5 μ A, making it an ideal high-end switch for low-voltage portable battery management systems that maximize battery life. The TPS1100's low RDS (conduction) and excellent AC characteristics (typical rise time of 10 ns) make it a reasonable choice for low-voltage switching applications such as pulse width modulation (PWM) controllers or power switches for motor / bridge drivers. The ultra-thin shrinking small profile package or TSSOP (PW) version has a smaller footprint and lower height, making it suitable for other P-channel MOSFET incompetent areas. Size advantage is particularly important when circuit board real estate is at a premium and height restrictions do not allow small outline integrated circuit (SOIC) packaging.
TPS1100D Features
Low rDS(on) . . . 0.18 ? Typ at VGS = –10 V
3 V Compatible
Requires No External VCC
TTL and CMOS Compatible Inputs
VGS(th) = –1.5 V Max
Available in Ultrathin TSSOP Package (PW)
ESD Protection Up to 2 kV Per
MIL-STD-883C, Method 3015
TPS1100D Applications
battery power supply system
pulse width modulation (PWM) controllers
power switches
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