TP2535N3-G

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Mfr.Part #
TP2535N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 350V 86MA TO92-3
Stock
6,756
In Stock :
6,756

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Bag
FET Type :
P-Channel
Factory Lead Time :
5 Weeks
Weight :
453.59237mg
Power Dissipation :
740mW
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
25 Ω @ 100mA, 10V
Product Category :
MOSFET
Feedback Cap-Max (Crss) :
25 pF
Pin Count :
3
Mounting Style :
Through Hole
Width :
4.19mm
Configuration :
Single
Mounting :
Through Hole
Operating Temp Range :
-55C to 150C
Base Product Number :
TP2535
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Product Type :
MOSFET
Packaging :
Bulk
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
0.086A
Operating Temperature Classification :
Military
Peak Reflow Temperature (Cel) :
Not Applicable
Drain-Source On-Volt :
350(V)
Transistor Application :
SWITCHING
Number of Elements :
1
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
-86mA
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Terminal Position :
BOTTOM
Transistor Element Material :
SILICON
Product Status :
Active
Drain to Source Voltage (Vdss) :
350V
Terminal Finish :
Matte Tin (Sn)
Resistance :
25Ohm
Fall Time (Typ) :
10 ns
Series :
--
Number of Terminations :
3
Turn-Off Delay Time :
20 ns
Additional Feature :
LOGIC LEVEL COMPATIBLE
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
P-Channel
Polarity :
P
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
Microchip
Continuous Drain Current :
0.086(A)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
740mW Ta
Turn On Delay Time :
10 ns
Current - Continuous Drain (Id) @ 25°C :
86mA Tj
Product :
MOSFET Small Signal
Height :
5.33mm
RoHS :
Details
Drain to Source Breakdown Voltage :
-350V
FET Feature :
--
Type :
Power MOSFET
Number of Channels :
1
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
Gate-Source Voltage (Max) :
±20(V)
Package Type :
TO-92
Supplier Device Package :
TO-92-3
Rise Time :
10ns
Element Configuration :
Single
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rad Hardened :
No
Brand :
Microchip Technology
Transistor Type :
1 P-Channel
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Mounting Type :
Through Hole
Published :
2013
Length :
5.21mm
Power Dissipation (Max) :
740mW (Ta)
Datasheets
TP2535N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2535N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Number of Channels:1, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, TP2535N3-G pinout, TP2535N3-G datasheet PDF, TP2535N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2535N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2535N3-G


P-Channel Bulk 25 Ω @ 100mA, 10V ±20V 125pF @ 25V 350V TO-226-3, TO-92-3 (TO-226AA)

TP2535N3-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 125pF @ 25V.This device has a continuous drain current (ID) of [-86mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-350V, the drain-source breakdown voltage is -350V.A device's drain current is its maximum continuous current, and this device's drain current is 0.086A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 350V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

TP2535N3-G Features


a continuous drain current (ID) of -86mA
a drain-to-source breakdown voltage of -350V voltage
the turn-off delay time is 20 ns
a 350V drain to source voltage (Vdss)


TP2535N3-G Applications


There are a lot of Microchip Technology
TP2535N3-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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