TP2535N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bag

FET Type :

P-Channel

Factory Lead Time :

5 Weeks

Weight :

453.59237mg

Power Dissipation :

740mW

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

25 Ω @ 100mA, 10V

Product Category :

MOSFET

Feedback Cap-Max (Crss) :

25 pF

Pin Count :

3

Mounting Style :

Through Hole

Width :

4.19mm

Configuration :

Single

Mounting :

Through Hole

Operating Temp Range :

-55C to 150C

Base Product Number :

TP2535

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Product Type :

MOSFET

Packaging :

Bulk

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Minimum Operating Temperature :

- 55 C

Drain Current-Max (Abs) (ID) :

0.086A

Operating Temperature Classification :

Military

Peak Reflow Temperature (Cel) :

Not Applicable

Drain-Source On-Volt :

350(V)

Transistor Application :

SWITCHING

Number of Elements :

1

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

-86mA

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 25V

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Product Status :

Active

Drain to Source Voltage (Vdss) :

350V

Terminal Finish :

Matte Tin (Sn)

Resistance :

25Ohm

Fall Time (Typ) :

10 ns

Series :

--

Number of Terminations :

3

Turn-Off Delay Time :

20 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

P-Channel

Polarity :

P

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

Microchip

Continuous Drain Current :

0.086(A)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

740mW Ta

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

86mA Tj

Product :

MOSFET Small Signal

Height :

5.33mm

RoHS :

Details

Drain to Source Breakdown Voltage :

-350V

FET Feature :

--

Type :

Power MOSFET

Number of Channels :

1

Number of Pins :

3

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Gate-Source Voltage (Max) :

±20(V)

Package Type :

TO-92

Supplier Device Package :

TO-92-3

Rise Time :

10ns

Element Configuration :

Single

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rad Hardened :

No

Brand :

Microchip Technology

Transistor Type :

1 P-Channel

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type :

Through Hole

Published :

2013

Length :

5.21mm

Power Dissipation (Max) :

740mW (Ta)