TP2535N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Power Dissipation (Max) :

740mW (Ta)

RoHS :

Details

Operating Temp Range :

-55C to 150C

Resistance :

25Ohm

Product Category :

MOSFET

Polarity :

P

Qualification Status :

Not Qualified

Product :

MOSFET Small Signal

Factory Lead Time :

5 Weeks

Height :

5.33mm

FET Type :

P-Channel

ECCN Code :

EAR99

Product Type :

MOSFET

Weight :

453.59237mg

Transistor Type :

1 P-Channel

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

3

Power Dissipation-Max :

740mW Ta

Number of Channels :

1

Base Product Number :

TP2535

Rad Hardened :

No

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-92-3

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

86mA Tj

Mounting Type :

Through Hole

Package Type :

TO-92

Maximum Operating Temperature :

+ 150 C

Element Configuration :

Single

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Published :

2013

Feedback Cap-Max (Crss) :

25 pF

Transistor Polarity :

P-Channel

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 25V

Packaging :

Bulk

Brand :

Microchip Technology

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Type :

Power MOSFET

Rise Time :

10ns

Series :

--

Mount :

Through Hole

Fall Time (Typ) :

10 ns

Drain Current-Max (Abs) (ID) :

0.086A

Length :

5.21mm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-86mA

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Mounting :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Minimum Operating Temperature :

- 55 C

Manufacturer :

Microchip

Gate-Source Voltage (Max) :

±20(V)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Package :

Bag

FET Feature :

--

Drain to Source Breakdown Voltage :

-350V

Continuous Drain Current :

0.086(A)

Rds On (Max) @ Id, Vgs :

25 Ω @ 100mA, 10V

Turn On Delay Time :

10 ns

Width :

4.19mm

Number of Elements :

1

Drain to Source Voltage (Vdss) :

350V

Configuration :

Single

Turn-Off Delay Time :

20 ns

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Pin Count :

3

Transistor Element Material :

SILICON

Drain-Source On-Volt :

350(V)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Channel Mode :

Enhancement

Power Dissipation :

740mW

Operating Temperature Classification :

Military