TP2535N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Operating Temperature Classification :

Military

Base Product Number :

TP2535

Width :

4.19mm

Power Dissipation (Max) :

740mW (Ta)

Qualification Status :

Not Qualified

Mounting :

Through Hole

Transistor Polarity :

P-Channel

Element Configuration :

Single

Continuous Drain Current (ID) :

-86mA

Power Dissipation-Max :

740mW Ta

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Drain Current-Max (Abs) (ID) :

0.086A

Transistor Type :

1 P-Channel

Package :

Bag

Number of Elements :

1

Series :

--

Channel Mode :

Enhancement

Manufacturer :

Microchip

Weight :

453.59237mg

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

350V

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Drain-Source On-Volt :

350(V)

Product :

MOSFET Small Signal

Rise Time :

10ns

Package Type :

TO-92

Gate-Source Voltage (Max) :

±20(V)

Type :

Power MOSFET

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-92-3

Fall Time (Typ) :

10 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

- 55 C

Polarity :

P

Operating Temp Range :

-55C to 150C

Pin Count :

3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

25 Ω @ 100mA, 10V

Height :

5.33mm

Transistor Application :

SWITCHING

Resistance :

25Ohm

Drain to Source Breakdown Voltage :

-350V

Product Type :

MOSFET

Terminal Position :

BOTTOM

RoHS :

Details

FET Feature :

--

Mounting Type :

Through Hole

Feedback Cap-Max (Crss) :

25 pF

Number of Channels :

1

Continuous Drain Current :

0.086(A)

Rad Hardened :

No

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

86mA Tj

Factory Lead Time :

5 Weeks

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Published :

2013

Product Category :

MOSFET

Transistor Element Material :

SILICON

Turn-Off Delay Time :

20 ns

Length :

5.21mm

Configuration :

Single

Power Dissipation :

740mW

Brand :

Microchip Technology

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

Turn On Delay Time :

10 ns