TP2520N8-G

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Mfr.Part #
TP2520N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 200V 260MA TO243AA
Stock
1,272
In Stock :
1,272

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
4
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Power Dissipation :
1.6W
Series :
--
Number of Channels :
1
Configuration :
Single
Continuous Drain Current (ID) :
260mA
Mount :
Surface Mount
Mounting Type :
Surface Mount
FET Feature :
--
Number of Terminations :
3
Continuous Drain Current Id :
0.26
Number of Elements :
1
Published :
2009
Width :
2.6mm
Manufacturer :
Microchip
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
40
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
-200V
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
15 ns
Transistor Application :
SWITCHING
Power Dissipation-Max :
1.6W Ta
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Packaging :
Tape and Reel (TR)
Power Dissipation (Max) :
1.6W (Ta)
Terminal Form :
Flat
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Product :
MOSFET Small Signal
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Channel Type :
P
Package / Case :
TO-243AA
JESD-609 Code :
e3
Type :
FET
JESD-30 Code :
R-PSSO-F3
Rise Time :
15ns
Supplier Device Package :
TO-243AA (SOT-89)
Drain Current-Max (Abs) (ID) :
0.26A
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Transistor Type :
1 P-Channel
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Pulsed Drain Current-Max (IDM) :
2A
Factory Lead Time :
12 Weeks
Height :
1.6mm
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
200V
FET Type :
P-Channel
Length :
4.6mm
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25°C :
260mA Tj
Transistor Polarity :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
SMD/SMT
Vgs (Max) :
±20V
Contact Plating :
Tin
Brand :
Microchip Technology
Turn-Off Delay Time :
20 ns
Turn On Delay Time :
10 ns
Radiation Hardening :
No
Weight :
52.786812mg
Channel Mode :
Enhancement
Base Product Number :
TP2520
Datasheets
TP2520N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2520N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Number of Channels:1, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-243AA, Type:FET, Operating Temperature:-55°C~150°C TJ, TP2520N8-G pinout, TP2520N8-G datasheet PDF, TP2520N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2520N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2520N8-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 200V TO-243AA

TP2520N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 260mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.26A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

TP2520N8-G Features


a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 200V drain to source voltage (Vdss)


TP2520N8-G Applications


There are a lot of Microchip Technology
TP2520N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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