TP2520N8-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Product :

MOSFET Small Signal

Length :

4.6mm

FET Feature :

--

Transistor Polarity :

P-Channel

Power Dissipation :

1.6W

RoHS :

Details

Power Dissipation (Max) :

1.6W (Ta)

Gate to Source Voltage (Vgs) :

20V

Product Category :

MOSFET

ECCN Code :

EAR99

JESD-609 Code :

e3

Supplier Device Package :

TO-243AA (SOT-89)

Current - Continuous Drain (Id) @ 25°C :

260mA Tj

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Turn-Off Delay Time :

20 ns

Product Type :

MOSFET

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 25V

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current Id :

0.26

Element Configuration :

Single

Turn On Delay Time :

10 ns

Type :

FET

Power Dissipation-Max :

1.6W Ta

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Width :

2.6mm

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Transistor Element Material :

SILICON

Package / Case :

TO-243AA

Factory Lead Time :

12 Weeks

Minimum Operating Temperature :

- 55 C

Contact Plating :

Tin

Manufacturer :

Microchip

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

2A

Height :

1.6mm

Continuous Drain Current (ID) :

260mA

JESD-30 Code :

R-PSSO-F3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 P-Channel

Number of Pins :

4

Vgs (Max) :

±20V

Mounting Style :

SMD/SMT

Product Status :

Active

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

Flat

Base Product Number :

TP2520

Case Connection :

DRAIN

Number of Terminations :

3

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Channel Type :

P

Brand :

Microchip Technology

Radiation Hardening :

No

Series :

--

Fall Time (Typ) :

15 ns

Weight :

52.786812mg

Published :

2009

Rds On (Max) @ Id, Vgs :

12 Ω @ 200mA, 10V

Drain Current-Max (Abs) (ID) :

0.26A

Drain to Source Breakdown Voltage :

-200V

Rise Time :

15ns

Number of Elements :

1