TP2520N8-G
- Mfr.Part #
- TP2520N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 260MA TO243AA
- Stock
- 1,272
- In Stock :
- 1,272
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Power Dissipation :
- 1.6W
- Series :
- --
- Number of Channels :
- 1
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 260mA
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- FET Feature :
- --
- Number of Terminations :
- 3
- Continuous Drain Current Id :
- 0.26
- Number of Elements :
- 1
- Published :
- 2009
- Width :
- 2.6mm
- Manufacturer :
- Microchip
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Drain to Source Breakdown Voltage :
- -200V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 15 ns
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 1.6W Ta
- Product Status :
- Active
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tape and Reel (TR)
- Power Dissipation (Max) :
- 1.6W (Ta)
- Terminal Form :
- Flat
- Minimum Operating Temperature :
- - 55 C
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Product :
- MOSFET Small Signal
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Channel Type :
- P
- Package / Case :
- TO-243AA
- JESD-609 Code :
- e3
- Type :
- FET
- JESD-30 Code :
- R-PSSO-F3
- Rise Time :
- 15ns
- Supplier Device Package :
- TO-243AA (SOT-89)
- Drain Current-Max (Abs) (ID) :
- 0.26A
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Transistor Type :
- 1 P-Channel
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Pulsed Drain Current-Max (IDM) :
- 2A
- Factory Lead Time :
- 12 Weeks
- Height :
- 1.6mm
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 200V
- FET Type :
- P-Channel
- Length :
- 4.6mm
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Current - Continuous Drain (Id) @ 25°C :
- 260mA Tj
- Transistor Polarity :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Style :
- SMD/SMT
- Vgs (Max) :
- ±20V
- Contact Plating :
- Tin
- Brand :
- Microchip Technology
- Turn-Off Delay Time :
- 20 ns
- Turn On Delay Time :
- 10 ns
- Radiation Hardening :
- No
- Weight :
- 52.786812mg
- Channel Mode :
- Enhancement
- Base Product Number :
- TP2520
- Datasheets
- TP2520N8-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 200V TO-243AA
TP2520N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 260mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.26A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
TP2520N8-G Features
a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 200V drain to source voltage (Vdss)
TP2520N8-G Applications
There are a lot of Microchip Technology
TP2520N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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