TP2520N8-G
- Mfr.Part #
- TP2520N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 260MA TO243AA
- Stock
- 1,272
- In Stock :
- 1,272
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 52.786812mg
- Transistor Application :
- SWITCHING
- Series :
- --
- Drain to Source Breakdown Voltage :
- -200V
- Length :
- 4.6mm
- JESD-30 Code :
- R-PSSO-F3
- RoHS :
- Details
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Polarity :
- P-Channel
- Width :
- 2.6mm
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Channel Type :
- P
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 0.26A
- Number of Terminations :
- 3
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 2A
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-243AA (SOT-89)
- Drain to Source Voltage (Vdss) :
- 200V
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Fall Time (Typ) :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Power Dissipation-Max :
- 1.6W Ta
- Factory Lead Time :
- 12 Weeks
- FET Feature :
- --
- Turn On Delay Time :
- 10 ns
- Type :
- FET
- Peak Reflow Temperature (Cel) :
- 260
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1
- Channel Mode :
- Enhancement
- Terminal Form :
- Flat
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Published :
- 2009
- Current - Continuous Drain (Id) @ 25°C :
- 260mA Tj
- Transistor Type :
- 1 P-Channel
- Product :
- MOSFET Small Signal
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 260mA
- Rise Time :
- 15ns
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Product Type :
- MOSFET
- Power Dissipation :
- 1.6W
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Product Status :
- Active
- Brand :
- Microchip Technology
- Product Category :
- MOSFET
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.6mm
- Power Dissipation (Max) :
- 1.6W (Ta)
- Lead Free :
- Lead Free
- Manufacturer :
- Microchip
- Configuration :
- Single
- Package / Case :
- TO-243AA
- Base Product Number :
- TP2520
- Mounting Style :
- SMD/SMT
- Radiation Hardening :
- No
- Continuous Drain Current Id :
- 0.26
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 20 ns
- Case Connection :
- DRAIN
- Datasheets
- TP2520N8-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 200V TO-243AA
TP2520N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 260mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.26A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
TP2520N8-G Features
a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 200V drain to source voltage (Vdss)
TP2520N8-G Applications
There are a lot of Microchip Technology
TP2520N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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