TP2520N8-G

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Mfr.Part #
TP2520N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 200V 260MA TO243AA
Stock
1,272
In Stock :
1,272

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Supplier Device Package :
TO-243AA (SOT-89)
Channel Type :
P
Configuration :
Single
Package / Case :
TO-243AA
Case Connection :
DRAIN
Power Dissipation (Max) :
1.6W (Ta)
Drain to Source Breakdown Voltage :
-200V
Terminal Form :
Flat
Transistor Polarity :
P-Channel
Drain Current-Max (Abs) (ID) :
0.26A
Product Status :
Active
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Product :
MOSFET Small Signal
Lead Free :
Lead Free
Rise Time :
15ns
Base Product Number :
TP2520
Transistor Application :
SWITCHING
Turn On Delay Time :
10 ns
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Number of Elements :
1
FET Feature :
--
Number of Pins :
4
Element Configuration :
Single
JESD-30 Code :
R-PSSO-F3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Height :
1.6mm
Weight :
52.786812mg
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
1.6W
Mount :
Surface Mount
Channel Mode :
Enhancement
Brand :
Microchip Technology
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Series :
--
Operating Temperature :
-55°C~150°C TJ
Minimum Operating Temperature :
- 55 C
Pulsed Drain Current-Max (IDM) :
2A
Continuous Drain Current (ID) :
260mA
Packaging :
Tape and Reel (TR)
Manufacturer :
Microchip
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Product Type :
MOSFET
Power Dissipation-Max :
1.6W Ta
Fall Time (Typ) :
15 ns
Vgs (Max) :
±20V
Radiation Hardening :
No
Length :
4.6mm
Factory Lead Time :
12 Weeks
Turn-Off Delay Time :
20 ns
Published :
2009
FET Type :
P-Channel
Continuous Drain Current Id :
0.26
ECCN Code :
EAR99
Number of Channels :
1
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
40
Type :
FET
Drain to Source Voltage (Vdss) :
200V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Peak Reflow Temperature (Cel) :
260
Current - Continuous Drain (Id) @ 25°C :
260mA Tj
Transistor Type :
1 P-Channel
Product Category :
MOSFET
Mounting Style :
SMD/SMT
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
RoHS Status :
ROHS3 Compliant
Width :
2.6mm
Datasheets
TP2520N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2520N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-243AA, Mounting Type:Surface Mount, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Type:FET, TP2520N8-G pinout, TP2520N8-G datasheet PDF, TP2520N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2520N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2520N8-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 200V TO-243AA

TP2520N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 260mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.26A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

TP2520N8-G Features


a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 200V drain to source voltage (Vdss)


TP2520N8-G Applications


There are a lot of Microchip Technology
TP2520N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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