TP2520N8-G

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Mfr.Part #
TP2520N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 200V 260MA TO243AA
Stock
1,272
In Stock :
1,272

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Weight :
52.786812mg
Transistor Application :
SWITCHING
Series :
--
Drain to Source Breakdown Voltage :
-200V
Length :
4.6mm
JESD-30 Code :
R-PSSO-F3
RoHS :
Details
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Polarity :
P-Channel
Width :
2.6mm
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Channel Type :
P
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
0.26A
Number of Terminations :
3
FET Type :
P-Channel
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
2A
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-243AA (SOT-89)
Drain to Source Voltage (Vdss) :
200V
Contact Plating :
Tin
Number of Elements :
1
Fall Time (Typ) :
15 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
4
Power Dissipation-Max :
1.6W Ta
Factory Lead Time :
12 Weeks
FET Feature :
--
Turn On Delay Time :
10 ns
Type :
FET
Peak Reflow Temperature (Cel) :
260
Minimum Operating Temperature :
- 55 C
Number of Channels :
1
Channel Mode :
Enhancement
Terminal Form :
Flat
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Published :
2009
Current - Continuous Drain (Id) @ 25°C :
260mA Tj
Transistor Type :
1 P-Channel
Product :
MOSFET Small Signal
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
260mA
Rise Time :
15ns
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Product Type :
MOSFET
Power Dissipation :
1.6W
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Product Status :
Active
Brand :
Microchip Technology
Product Category :
MOSFET
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Operating Temperature :
-55°C~150°C TJ
Height :
1.6mm
Power Dissipation (Max) :
1.6W (Ta)
Lead Free :
Lead Free
Manufacturer :
Microchip
Configuration :
Single
Package / Case :
TO-243AA
Base Product Number :
TP2520
Mounting Style :
SMD/SMT
Radiation Hardening :
No
Continuous Drain Current Id :
0.26
ECCN Code :
EAR99
JESD-609 Code :
e3
Maximum Operating Temperature :
+ 150 C
Turn-Off Delay Time :
20 ns
Case Connection :
DRAIN
Datasheets
TP2520N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2520N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:4, Type:FET, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-243AA, TP2520N8-G pinout, TP2520N8-G datasheet PDF, TP2520N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2520N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2520N8-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 200V TO-243AA

TP2520N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 260mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.26A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

TP2520N8-G Features


a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 200V drain to source voltage (Vdss)


TP2520N8-G Applications


There are a lot of Microchip Technology
TP2520N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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