TP2520N8-G
- Mfr.Part #
- TP2520N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 260MA TO243AA
- Stock
- 1,272
- In Stock :
- 1,272
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-243AA (SOT-89)
- Channel Type :
- P
- Configuration :
- Single
- Package / Case :
- TO-243AA
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 1.6W (Ta)
- Drain to Source Breakdown Voltage :
- -200V
- Terminal Form :
- Flat
- Transistor Polarity :
- P-Channel
- Drain Current-Max (Abs) (ID) :
- 0.26A
- Product Status :
- Active
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Product :
- MOSFET Small Signal
- Lead Free :
- Lead Free
- Rise Time :
- 15ns
- Base Product Number :
- TP2520
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 10 ns
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- FET Feature :
- --
- Number of Pins :
- 4
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-F3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Height :
- 1.6mm
- Weight :
- 52.786812mg
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 1.6W
- Mount :
- Surface Mount
- Channel Mode :
- Enhancement
- Brand :
- Microchip Technology
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Series :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 2A
- Continuous Drain Current (ID) :
- 260mA
- Packaging :
- Tape and Reel (TR)
- Manufacturer :
- Microchip
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Product Type :
- MOSFET
- Power Dissipation-Max :
- 1.6W Ta
- Fall Time (Typ) :
- 15 ns
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Length :
- 4.6mm
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 20 ns
- Published :
- 2009
- FET Type :
- P-Channel
- Continuous Drain Current Id :
- 0.26
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Type :
- FET
- Drain to Source Voltage (Vdss) :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 260mA Tj
- Transistor Type :
- 1 P-Channel
- Product Category :
- MOSFET
- Mounting Style :
- SMD/SMT
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.6mm
- Datasheets
- TP2520N8-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 200V TO-243AA
TP2520N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 260mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.26A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
TP2520N8-G Features
a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 200V drain to source voltage (Vdss)
TP2520N8-G Applications
There are a lot of Microchip Technology
TP2520N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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