TP2510N8-G

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Mfr.Part #
TP2510N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 100V 480MA TO243AA
Stock
17,163
In Stock :
17,163

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
SMD/SMT
MSL :
MSL 1 - Unlimited
Supplier Device Package :
TO-243AA (SOT-89)
Case Connection :
DRAIN
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
ECCN Code :
EAR99
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
3.5 Ω @ 750mA, 10V
Published :
2001
Series :
-
Number of Channels :
1
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
P-Channel
Configuration :
Single
Terminal Finish :
Matte Tin (Sn) - annealed
Drain to Source Voltage (Vdss) :
100V
Width :
2.6mm
Number of Terminations :
3
FET Type :
P-Channel
Power Dissipation (Max) :
1.6W (Ta)
Type :
FET
Continuous Drain Current (ID) :
480mA
Transistor Type :
1 P-Channel
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
480mA Tj
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
4
Manufacturer :
Microchip
Transistor Element Material :
SILICON
Power Dissipation-Max :
1.6W Ta
FET Feature :
-
Base Product Number :
TP2510
RoHS :
Details
Channel Type :
P
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Drain to Source Breakdown Voltage :
-100V
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Terminal Form :
Flat
Radiation Hardening :
No
Turn On Delay Time :
10 ns
Transistor Application :
SWITCHING
Turn-Off Delay Time :
20 ns
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation :
1.6W
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSSO-F3
Mount :
Surface Mount
Package / Case :
TO-243AA
Element Configuration :
Single
Length :
4.6mm
Continuous Drain Current Id :
480
Product :
MOSFET Small Signal
JESD-609 Code :
e3
Weight :
52.786812mg
Channel Mode :
Enhancement
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Height :
1.6mm
Qualification :
-
Brand :
Microchip Technology / Atmel
Lead Free :
Lead Free
Factory Lead Time :
6 Weeks
Rise Time :
15ns
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
2.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
15 ns
Datasheets
TP2510N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Terminations:3, Type:FET, Number of Pins:4, Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, TP2510N8-G pinout, TP2510N8-G datasheet PDF, TP2510N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2510N8-G


P-Channel Tape & Reel (TR) 3.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100V TO-243AA

TP2510N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TP2510N8-G Features


a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2.5A.
a 100V drain to source voltage (Vdss)


TP2510N8-G Applications


There are a lot of Microchip Technology
TP2510N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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