TP2510N8-G

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Mfr.Part #
TP2510N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 100V 480MA TO243AA
Stock
17,163
In Stock :
17,163

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification :
-
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Product Status :
Active
Series :
-
Continuous Drain Current (ID) :
480mA
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Maximum Operating Temperature :
+ 150 C
Brand :
Microchip Technology / Atmel
Terminal Finish :
Matte Tin (Sn) - annealed
Terminal Form :
Flat
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Drain to Source Breakdown Voltage :
-100V
Transistor Element Material :
SILICON
Power Dissipation-Max :
1.6W Ta
Factory Lead Time :
6 Weeks
Rds On (Max) @ Id, Vgs :
3.5 Ω @ 750mA, 10V
Vgs (Max) :
±20V
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
480mA Tj
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
15 ns
Length :
4.6mm
Number of Pins :
4
Number of Channels :
1
Peak Reflow Temperature (Cel) :
260
Radiation Hardening :
No
Lead Free :
Lead Free
Published :
2001
Height :
1.6mm
Package / Case :
TO-243AA
Product Category :
MOSFET
RoHS :
Details
Rise Time :
15ns
Weight :
52.786812mg
Mounting Style :
SMD/SMT
Power Dissipation :
1.6W
Continuous Drain Current Id :
480
Drain to Source Voltage (Vdss) :
100V
Number of Terminations :
3
Transistor Type :
1 P-Channel
JESD-30 Code :
R-PSSO-F3
Type :
FET
JESD-609 Code :
e3
Supplier Device Package :
TO-243AA (SOT-89)
Channel Type :
P
Turn-Off Delay Time :
20 ns
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Channel Mode :
Enhancement
FET Feature :
-
MSL :
MSL 1 - Unlimited
Width :
2.6mm
Gate to Source Voltage (Vgs) :
20V
Product Type :
MOSFET
Mount :
Surface Mount
FET Type :
P-Channel
Manufacturer :
Microchip
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Minimum Operating Temperature :
- 55 C
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Power Dissipation (Max) :
1.6W (Ta)
Pulsed Drain Current-Max (IDM) :
2.5A
Transistor Application :
SWITCHING
Base Product Number :
TP2510
Turn On Delay Time :
10 ns
Transistor Polarity :
P-Channel
Product :
MOSFET Small Signal
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
TP2510N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Number of Channels:1, Package / Case:TO-243AA, Number of Terminations:3, Type:FET, Mounting Type:Surface Mount, TP2510N8-G pinout, TP2510N8-G datasheet PDF, TP2510N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2510N8-G


P-Channel Tape & Reel (TR) 3.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100V TO-243AA

TP2510N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TP2510N8-G Features


a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2.5A.
a 100V drain to source voltage (Vdss)


TP2510N8-G Applications


There are a lot of Microchip Technology
TP2510N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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