TP2510N8-G
- Mfr.Part #
- TP2510N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 480MA TO243AA
- Stock
- 17,163
- In Stock :
- 17,163
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification :
- -
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Product Status :
- Active
- Series :
- -
- Continuous Drain Current (ID) :
- 480mA
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Maximum Operating Temperature :
- + 150 C
- Brand :
- Microchip Technology / Atmel
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Terminal Form :
- Flat
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Drain to Source Breakdown Voltage :
- -100V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.6W Ta
- Factory Lead Time :
- 6 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 750mA, 10V
- Vgs (Max) :
- ±20V
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 480mA Tj
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 15 ns
- Length :
- 4.6mm
- Number of Pins :
- 4
- Number of Channels :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Published :
- 2001
- Height :
- 1.6mm
- Package / Case :
- TO-243AA
- Product Category :
- MOSFET
- RoHS :
- Details
- Rise Time :
- 15ns
- Weight :
- 52.786812mg
- Mounting Style :
- SMD/SMT
- Power Dissipation :
- 1.6W
- Continuous Drain Current Id :
- 480
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Terminations :
- 3
- Transistor Type :
- 1 P-Channel
- JESD-30 Code :
- R-PSSO-F3
- Type :
- FET
- JESD-609 Code :
- e3
- Supplier Device Package :
- TO-243AA (SOT-89)
- Channel Type :
- P
- Turn-Off Delay Time :
- 20 ns
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- FET Feature :
- -
- MSL :
- MSL 1 - Unlimited
- Width :
- 2.6mm
- Gate to Source Voltage (Vgs) :
- 20V
- Product Type :
- MOSFET
- Mount :
- Surface Mount
- FET Type :
- P-Channel
- Manufacturer :
- Microchip
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 1.6W (Ta)
- Pulsed Drain Current-Max (IDM) :
- 2.5A
- Transistor Application :
- SWITCHING
- Base Product Number :
- TP2510
- Turn On Delay Time :
- 10 ns
- Transistor Polarity :
- P-Channel
- Product :
- MOSFET Small Signal
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- TP2510N8-G

P-Channel Tape & Reel (TR) 3.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100V TO-243AA
TP2510N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TP2510N8-G Features
a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2.5A.
a 100V drain to source voltage (Vdss)
TP2510N8-G Applications
There are a lot of Microchip Technology
TP2510N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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