TP2510N8-G

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Mfr.Part #
TP2510N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 100V 480MA TO243AA
Stock
17,163
In Stock :
17,163

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
RoHS :
Details
Packaging :
Tape and Reel (TR)
Supplier Device Package :
TO-243AA (SOT-89)
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Terminal Form :
Flat
Terminal Finish :
Matte Tin (Sn) - annealed
Product :
MOSFET Small Signal
Mount :
Surface Mount
Power Dissipation :
1.6W
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Type :
FET
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSSO-F3
Number of Terminations :
3
Vgs (Max) :
±20V
Transistor Polarity :
P-Channel
Drain to Source Voltage (Vdss) :
100V
Lead Free :
Lead Free
Base Product Number :
TP2510
Manufacturer :
Microchip
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Channel Type :
P
Height :
1.6mm
Number of Channels :
1
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Case Connection :
DRAIN
Channel Mode :
Enhancement
Rise Time :
15ns
Weight :
52.786812mg
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
480mA Tj
Length :
4.6mm
Series :
-
Transistor Type :
1 P-Channel
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
3.5 Ω @ 750mA, 10V
Fall Time (Typ) :
15 ns
Turn On Delay Time :
10 ns
Qualification :
-
Power Dissipation (Max) :
1.6W (Ta)
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Package / Case :
TO-243AA
Pulsed Drain Current-Max (IDM) :
2.5A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
4
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Turn-Off Delay Time :
20 ns
Element Configuration :
Single
Continuous Drain Current (ID) :
480mA
Operating Mode :
ENHANCEMENT MODE
FET Type :
P-Channel
Mounting Style :
SMD/SMT
Power Dissipation-Max :
1.6W Ta
Factory Lead Time :
6 Weeks
Transistor Element Material :
SILICON
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain to Source Breakdown Voltage :
-100V
FET Feature :
-
Brand :
Microchip Technology / Atmel
Width :
2.6mm
Product Status :
Active
Published :
2001
Continuous Drain Current Id :
480
Peak Reflow Temperature (Cel) :
260
MSL :
MSL 1 - Unlimited
ECCN Code :
EAR99
Datasheets
TP2510N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G from Chip IC,where excellence meets affordability. This product stands out with its Type:FET, Number of Terminations:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-243AA, Number of Pins:4, TP2510N8-G pinout, TP2510N8-G datasheet PDF, TP2510N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2510N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2510N8-G


P-Channel Tape & Reel (TR) 3.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100V TO-243AA

TP2510N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TP2510N8-G Features


a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2.5A.
a 100V drain to source voltage (Vdss)


TP2510N8-G Applications


There are a lot of Microchip Technology
TP2510N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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