TP2510N8-G
- Mfr.Part #
- TP2510N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 480MA TO243AA
- Stock
- 17,163
- In Stock :
- 17,163
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- RoHS :
- Details
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- TO-243AA (SOT-89)
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Terminal Form :
- Flat
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Product :
- MOSFET Small Signal
- Mount :
- Surface Mount
- Power Dissipation :
- 1.6W
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Type :
- FET
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-F3
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Lead Free :
- Lead Free
- Base Product Number :
- TP2510
- Manufacturer :
- Microchip
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Channel Type :
- P
- Height :
- 1.6mm
- Number of Channels :
- 1
- Minimum Operating Temperature :
- - 55 C
- Product Type :
- MOSFET
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Rise Time :
- 15ns
- Weight :
- 52.786812mg
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 480mA Tj
- Length :
- 4.6mm
- Series :
- -
- Transistor Type :
- 1 P-Channel
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 750mA, 10V
- Fall Time (Typ) :
- 15 ns
- Turn On Delay Time :
- 10 ns
- Qualification :
- -
- Power Dissipation (Max) :
- 1.6W (Ta)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Package / Case :
- TO-243AA
- Pulsed Drain Current-Max (IDM) :
- 2.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 20 ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 480mA
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max :
- 1.6W Ta
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Drain to Source Breakdown Voltage :
- -100V
- FET Feature :
- -
- Brand :
- Microchip Technology / Atmel
- Width :
- 2.6mm
- Product Status :
- Active
- Published :
- 2001
- Continuous Drain Current Id :
- 480
- Peak Reflow Temperature (Cel) :
- 260
- MSL :
- MSL 1 - Unlimited
- ECCN Code :
- EAR99
- Datasheets
- TP2510N8-G

P-Channel Tape & Reel (TR) 3.5 Ω @ 750mA, 10V ±20V 125pF @ 25V 100V TO-243AA
TP2510N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 125pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 480mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 2.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TP2510N8-G Features
a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2.5A.
a 100V drain to source voltage (Vdss)
TP2510N8-G Applications
There are a lot of Microchip Technology
TP2510N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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