TP2522N8-G
- Mfr.Part #
- TP2522N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 220V 260MA TO243AA
- Stock
- 7,516
- In Stock :
- 7,516
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 0.26A
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 10 ns
- Element Configuration :
- Single
- Manufacturer :
- Microchip
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- -
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 15ns
- Drain to Source Breakdown Voltage :
- -220V
- Turn-Off Delay Time :
- 20 ns
- Product Status :
- Active
- Product Type :
- MOSFET
- Configuration :
- Single
- Transistor Polarity :
- P-Channel
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 260mA Tj
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 15 ns
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- RoHS :
- Details
- Height :
- 1.6mm
- Supplier Device Package :
- TO-243AA (SOT-89)
- Package / Case :
- TO-243AA
- Transistor Type :
- 1 P-Channel
- Transistor Application :
- SWITCHING
- Type :
- FET
- Drain to Source Voltage (Vdss) :
- 220V
- Power Dissipation :
- 1.6W
- Channel Mode :
- Enhancement
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 1.6W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-30 Code :
- R-PSSO-F3
- FET Type :
- P-Channel
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 2A
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Weight :
- 52.786812mg
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Style :
- SMD/SMT
- Product :
- MOSFET Small Signal
- Length :
- 4.6mm
- Number of Terminations :
- 3
- Brand :
- Microchip Technology
- Number of Channels :
- 1
- Series :
- -
- Mount :
- Surface Mount
- Base Product Number :
- TP2522
- Vgs (Max) :
- ±20V
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Number of Pins :
- 4
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Resistance :
- 12Ohm
- Package :
- Tape and Reel (TR)
- Power Dissipation (Max) :
- 1.6W (Ta)
- Width :
- 2.6mm
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- -260mA
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Datasheets
- TP2522N8-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 220V TO-243AA
TP2522N8-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 125pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.There is no drain current on this device since the maximum continuous current it can conduct is 0.26A.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 2A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
TP2522N8-G Features
a continuous drain current (ID) of -260mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 220V drain to source voltage (Vdss)
TP2522N8-G Applications
There are a lot of Microchip Technology
TP2522N8-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















