TP2522N8-G

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Mfr.Part #
TP2522N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 220V 260MA TO243AA
Stock
7,516
In Stock :
7,516

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
1.6W
Current - Continuous Drain (Id) @ 25°C :
260mA Tj
Peak Reflow Temperature (Cel) :
260
Height :
1.6mm
Power Dissipation-Max :
1.6W Ta
Element Configuration :
Single
Brand :
Microchip Technology
Manufacturer :
Microchip
Transistor Polarity :
P-Channel
Number of Terminations :
3
Power Dissipation (Max) :
1.6W (Ta)
Drain to Source Breakdown Voltage :
-220V
JESD-30 Code :
R-PSSO-F3
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
SMD/SMT
Product :
MOSFET Small Signal
Factory Lead Time :
15 Weeks
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
Rise Time :
15ns
Number of Channels :
1
Transistor Element Material :
SILICON
Weight :
52.786812mg
Minimum Operating Temperature :
- 55 C
Published :
2013
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Configuration :
Single
Transistor Type :
1 P-Channel
Supplier Device Package :
TO-243AA (SOT-89)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
2.6mm
Resistance :
12Ohm
Package :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Base Product Number :
TP2522
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Length :
4.6mm
Product Type :
MOSFET
Product Category :
MOSFET
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
220V
Series :
-
Number of Pins :
4
Package / Case :
TO-243AA
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Fall Time (Typ) :
15 ns
Turn-Off Delay Time :
20 ns
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
2A
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
FET Type :
P-Channel
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
0.26A
RoHS :
Details
Type :
FET
Turn On Delay Time :
10 ns
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Continuous Drain Current (ID) :
-260mA
Mount :
Surface Mount
Terminal Form :
Flat
Channel Mode :
Enhancement
FET Feature :
-
Product Status :
Active
Packaging :
Tape and Reel (TR)
Datasheets
TP2522N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2522N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Pins:4, Package / Case:TO-243AA, Mounting Type:Surface Mount, Type:FET, TP2522N8-G pinout, TP2522N8-G datasheet PDF, TP2522N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2522N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2522N8-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 220V TO-243AA

TP2522N8-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 125pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.There is no drain current on this device since the maximum continuous current it can conduct is 0.26A.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 2A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

TP2522N8-G Features


a continuous drain current (ID) of -260mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 220V drain to source voltage (Vdss)


TP2522N8-G Applications


There are a lot of Microchip Technology
TP2522N8-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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