TP2522N8-G
- Mfr.Part #
- TP2522N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 220V 260MA TO243AA
- Stock
- 7,516
- In Stock :
- 7,516
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 P-Channel
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 1.6W (Ta)
- FET Feature :
- -
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 10 ns
- JESD-30 Code :
- R-PSSO-F3
- Qualification Status :
- Not Qualified
- Width :
- 2.6mm
- Packaging :
- Tape and Reel (TR)
- Manufacturer :
- Microchip
- Terminal Form :
- Flat
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 220V
- Series :
- -
- Transistor Polarity :
- P-Channel
- Number of Channels :
- 1
- Power Dissipation :
- 1.6W
- Supplier Device Package :
- TO-243AA (SOT-89)
- Product Status :
- Active
- Resistance :
- 12Ohm
- Pulsed Drain Current-Max (IDM) :
- 2A
- Current - Continuous Drain (Id) @ 25°C :
- 260mA Tj
- Peak Reflow Temperature (Cel) :
- 260
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 1.6W Ta
- Number of Pins :
- 4
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Case Connection :
- DRAIN
- Length :
- 4.6mm
- Drain to Source Breakdown Voltage :
- -220V
- Fall Time (Typ) :
- 15 ns
- Rise Time :
- 15ns
- Published :
- 2013
- RoHS :
- Details
- Turn-Off Delay Time :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- TP2522
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Number of Terminations :
- 3
- Mounting Style :
- SMD/SMT
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Factory Lead Time :
- 15 Weeks
- Weight :
- 52.786812mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- -260mA
- Package / Case :
- TO-243AA
- Height :
- 1.6mm
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Brand :
- Microchip Technology
- Channel Mode :
- Enhancement
- Mount :
- Surface Mount
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Product :
- MOSFET Small Signal
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 0.26A
- Type :
- FET
- Datasheets
- TP2522N8-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 125pF @ 25V 220V TO-243AA
TP2522N8-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 125pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.There is no drain current on this device since the maximum continuous current it can conduct is 0.26A.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 2A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
TP2522N8-G Features
a continuous drain current (ID) of -260mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 220V drain to source voltage (Vdss)
TP2522N8-G Applications
There are a lot of Microchip Technology
TP2522N8-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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