TP2502N8-G
- Mfr.Part #
- TP2502N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 630MA TO243AA
- Stock
- 40,832
- In Stock :
- 40,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Manufacturer :
- Microchip
- Power Dissipation (Max) :
- 1.6W (Ta)
- Transistor Polarity :
- P-Channel
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Configuration :
- Single
- Height :
- 1.6mm
- Base Product Number :
- TP2502
- Product :
- MOSFET Small Signal
- Drain to Source Breakdown Voltage :
- -20V
- Continuous Drain Current :
- 3.3(A)
- Package / Case :
- TO-243AA
- Factory Lead Time :
- 6 Weeks
- Width :
- 2.6mm
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Transistor Type :
- 1 P-Channel
- Continuous Drain Current Id :
- 630
- Mounting Style :
- SMD/SMT
- Terminal Form :
- Flat
- Operating Temperature Classification :
- Military
- Turn On Delay Time :
- 10 ns
- Fall Time (Typ) :
- 11 ns
- Gate-Source Voltage (Max) :
- ±20(V)
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Brand :
- Microchip Technology
- Pulsed Drain Current-Max (IDM) :
- 3.3A
- Drain-Source On-Volt :
- 20(V)
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Rad Hardened :
- No
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 15 ns
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Continuous Drain Current (ID) :
- 630mA
- Series :
- --
- Operating Temp Range :
- -55C to 150C
- FET Type :
- P-Channel
- JESD-30 Code :
- R-PSSO-F3
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.6mm
- RoHS :
- Details
- Weight :
- 52.786812mg
- Power Dissipation-Max :
- 1.6W Ta
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 2Ohm
- Channel Type :
- P
- Power Dissipation :
- 1.6W
- Mounting :
- Surface Mount
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Subcategory :
- MOSFETs
- Published :
- 2008
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Type :
- Power MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-243AA (SOT-89)
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Polarity :
- P
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3 +Tab
- FET Feature :
- --
- Rise Time :
- 11ns
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Drain Current-Max (Abs) (ID) :
- 0.63A
- Number of Pins :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Tj
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 20V
- Package Type :
- SOT-89
- Product Status :
- Active
- Datasheets
- TP2502N8-G

P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA
TP2502N8-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
TP2502N8-G Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)
TP2502N8-G Applications
There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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