TP2502N8-G
- Mfr.Part #
- TP2502N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 630MA TO243AA
- Stock
- 40,832
- In Stock :
- 40,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 0.63A
- Channel Type :
- P
- Package / Case :
- TO-243AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 2Ohm
- Weight :
- 52.786812mg
- Transistor Type :
- 1 P-Channel
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 11 ns
- Drain to Source Breakdown Voltage :
- -20V
- JESD-30 Code :
- R-PSSO-F3
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Channel Mode :
- Enhancement
- Brand :
- Microchip Technology
- Supplier Device Package :
- TO-243AA (SOT-89)
- Series :
- --
- Rise Time :
- 11ns
- Pulsed Drain Current-Max (IDM) :
- 3.3A
- Number of Channels :
- 1 Channel
- Continuous Drain Current :
- 3.3(A)
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Turn-Off Delay Time :
- 15 ns
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 3
- Mounting :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Height :
- 1.6mm
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Package Type :
- SOT-89
- Length :
- 4.6mm
- Turn On Delay Time :
- 10 ns
- Power Dissipation :
- 1.6W
- Continuous Drain Current Id :
- 630
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Power Dissipation-Max :
- 1.6W Ta
- Maximum Operating Temperature :
- + 150 C
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Tj
- Configuration :
- Single
- Power Dissipation (Max) :
- 1.6W (Ta)
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- TP2502
- Type :
- Power MOSFET
- Product Status :
- Active
- RoHS :
- Details
- Drain-Source On-Volt :
- 20(V)
- Drain to Source Voltage (Vdss) :
- 20V
- Published :
- 2008
- FET Feature :
- --
- Product :
- MOSFET Small Signal
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Rad Hardened :
- No
- Pin Count :
- 3 +Tab
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Polarity :
- P
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Number of Elements :
- 1
- Transistor Polarity :
- P-Channel
- Operating Temp Range :
- -55C to 150C
- Subcategory :
- MOSFETs
- Operating Temperature Classification :
- Military
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Width :
- 2.6mm
- Gate-Source Voltage (Max) :
- ±20(V)
- FET Type :
- P-Channel
- Mounting Style :
- SMD/SMT
- Continuous Drain Current (ID) :
- 630mA
- Manufacturer :
- Microchip
- Datasheets
- TP2502N8-G

P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA
TP2502N8-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
TP2502N8-G Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)
TP2502N8-G Applications
There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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