TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Type :
P
Factory Lead Time :
6 Weeks
Packaging :
Tape and Reel (TR)
Drain-source On Resistance-Max :
2Ohm
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
630mA
Fall Time (Typ) :
11 ns
RoHS :
Details
Turn-Off Delay Time :
15 ns
Channel Mode :
Enhancement
Product :
MOSFET Small Signal
Base Product Number :
TP2502
Product Status :
Active
Continuous Drain Current :
3.3(A)
Time@Peak Reflow Temperature-Max (s) :
40
FET Type :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Number of Pins :
4
Polarity :
P
Peak Reflow Temperature (Cel) :
260
Mounting Style :
SMD/SMT
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
0.63A
Transistor Polarity :
P-Channel
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Type :
Power MOSFET
Width :
2.6mm
Power Dissipation :
1.6W
Series :
--
Height :
1.6mm
Pulsed Drain Current-Max (IDM) :
3.3A
Drain-Source On-Volt :
20(V)
Operating Mode :
ENHANCEMENT MODE
Brand :
Microchip Technology
JESD-609 Code :
e3
Subcategory :
MOSFETs
Published :
2008
Power Dissipation-Max :
1.6W Ta
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Product Category :
MOSFET
ECCN Code :
EAR99
Operating Temp Range :
-55C to 150C
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
Rise Time :
11ns
Transistor Element Material :
SILICON
Number of Terminations :
3
Gate-Source Voltage (Max) :
±20(V)
Rad Hardened :
No
Mounting :
Surface Mount
Weight :
52.786812mg
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn)
Number of Elements :
1
Turn On Delay Time :
10 ns
Continuous Drain Current Id :
630
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Power Dissipation (Max) :
1.6W (Ta)
Supplier Device Package :
TO-243AA (SOT-89)
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Operating Temperature Classification :
Military
Transistor Type :
1 P-Channel
Pin Count :
3 +Tab
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-F3
Terminal Form :
Flat
Maximum Operating Temperature :
+ 150 C
FET Feature :
--
Drain to Source Breakdown Voltage :
-20V
Additional Feature :
LOGIC LEVEL COMPATIBLE
Package Type :
SOT-89
Manufacturer :
Microchip
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
20V
Length :
4.6mm
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Configuration :
Single
Package / Case :
TO-243AA
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Type:Power MOSFET, Number of Terminations:3, Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:TO-243AA, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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