TP2502N8-G
- Mfr.Part #
- TP2502N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 630MA TO243AA
- Stock
- 40,832
- In Stock :
- 40,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Type :
- P
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 2Ohm
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 630mA
- Fall Time (Typ) :
- 11 ns
- RoHS :
- Details
- Turn-Off Delay Time :
- 15 ns
- Channel Mode :
- Enhancement
- Product :
- MOSFET Small Signal
- Base Product Number :
- TP2502
- Product Status :
- Active
- Continuous Drain Current :
- 3.3(A)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Number of Pins :
- 4
- Polarity :
- P
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Style :
- SMD/SMT
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 0.63A
- Transistor Polarity :
- P-Channel
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Type :
- Power MOSFET
- Width :
- 2.6mm
- Power Dissipation :
- 1.6W
- Series :
- --
- Height :
- 1.6mm
- Pulsed Drain Current-Max (IDM) :
- 3.3A
- Drain-Source On-Volt :
- 20(V)
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- Microchip Technology
- JESD-609 Code :
- e3
- Subcategory :
- MOSFETs
- Published :
- 2008
- Power Dissipation-Max :
- 1.6W Ta
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Operating Temp Range :
- -55C to 150C
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Tj
- Rise Time :
- 11ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Gate-Source Voltage (Max) :
- ±20(V)
- Rad Hardened :
- No
- Mounting :
- Surface Mount
- Weight :
- 52.786812mg
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Turn On Delay Time :
- 10 ns
- Continuous Drain Current Id :
- 630
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Power Dissipation (Max) :
- 1.6W (Ta)
- Supplier Device Package :
- TO-243AA (SOT-89)
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Operating Temperature Classification :
- Military
- Transistor Type :
- 1 P-Channel
- Pin Count :
- 3 +Tab
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Terminal Form :
- Flat
- Maximum Operating Temperature :
- + 150 C
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- -20V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Package Type :
- SOT-89
- Manufacturer :
- Microchip
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 20V
- Length :
- 4.6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Configuration :
- Single
- Package / Case :
- TO-243AA
- Datasheets
- TP2502N8-G

P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA
TP2502N8-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
TP2502N8-G Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)
TP2502N8-G Applications
There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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