TP2502N8-G
- Mfr.Part #
- TP2502N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 630MA TO243AA
- Stock
- 40,832
- In Stock :
- 40,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- P-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Rad Hardened :
- No
- Number of Terminations :
- 3
- Configuration :
- Single
- Power Dissipation-Max :
- 1.6W Ta
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 3.3A
- Mounting :
- Surface Mount
- Base Product Number :
- TP2502
- Product Category :
- MOSFET
- Brand :
- Microchip Technology
- Product Status :
- Active
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Transistor Type :
- 1 P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Tj
- JESD-609 Code :
- e3
- Gate-Source Voltage (Max) :
- ±20(V)
- Published :
- 2008
- Continuous Drain Current (ID) :
- 630mA
- Width :
- 2.6mm
- Operating Temp Range :
- -55C to 150C
- Type :
- Power MOSFET
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Element Configuration :
- Single
- Number of Pins :
- 4
- Height :
- 1.6mm
- Case Connection :
- DRAIN
- Subcategory :
- MOSFETs
- Terminal Form :
- Flat
- Operating Temperature Classification :
- Military
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Turn-Off Delay Time :
- 15 ns
- Package Type :
- SOT-89
- Power Dissipation :
- 1.6W
- Weight :
- 52.786812mg
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 20V
- Pin Count :
- 3 +Tab
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 0.63A
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Channel Type :
- P
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- -20V
- Series :
- --
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 2Ohm
- Length :
- 4.6mm
- Supplier Device Package :
- TO-243AA (SOT-89)
- Continuous Drain Current Id :
- 630
- Continuous Drain Current :
- 3.3(A)
- Turn On Delay Time :
- 10 ns
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- Microchip
- Polarity :
- P
- Drain-Source On-Volt :
- 20(V)
- Product :
- MOSFET Small Signal
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 6 Weeks
- RoHS :
- Details
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation (Max) :
- 1.6W (Ta)
- Rise Time :
- 11ns
- Fall Time (Typ) :
- 11 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Mounting Style :
- SMD/SMT
- ECCN Code :
- EAR99
- Datasheets
- TP2502N8-G

P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA
TP2502N8-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
TP2502N8-G Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)
TP2502N8-G Applications
There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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