TP2502N8-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Turn On Delay Time :

10 ns

Drain to Source Breakdown Voltage :

-20V

Manufacturer :

Microchip

Element Configuration :

Single

Polarity :

P

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Power Dissipation :

1.6W

Package / Case :

TO-243AA

Time@Peak Reflow Temperature-Max (s) :

40

Maximum Operating Temperature :

+ 150 C

Number of Pins :

4

Factory Lead Time :

6 Weeks

Transistor Type :

1 P-Channel

Operating Temperature Classification :

Military

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

Qualification Status :

Not Qualified

Brand :

Microchip Technology

Number of Channels :

1 Channel

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Product :

MOSFET Small Signal

Mount :

Surface Mount

Mounting Style :

SMD/SMT

Rad Hardened :

No

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Terminal Form :

Flat

Channel Mode :

Enhancement

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

630mA

Drain-Source On-Volt :

20(V)

Fall Time (Typ) :

11 ns

Channel Type :

P

Base Product Number :

TP2502

Supplier Device Package :

TO-243AA (SOT-89)

Height :

1.6mm

Package Type :

SOT-89

Pulsed Drain Current-Max (IDM) :

3.3A

Transistor Polarity :

P-Channel

Power Dissipation (Max) :

1.6W (Ta)

Number of Terminations :

3

FET Feature :

--

Gate-Source Voltage (Max) :

±20(V)

Continuous Drain Current Id :

630

Width :

2.6mm

RoHS Status :

ROHS3 Compliant

Rise Time :

11ns

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Configuration :

Single

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.63A

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Weight :

52.786812mg

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Series :

--

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 20V

Drain-source On Resistance-Max :

2Ohm

Continuous Drain Current :

3.3(A)

JESD-30 Code :

R-PSSO-F3

Subcategory :

MOSFETs

Type :

Power MOSFET

Operating Temp Range :

-55C to 150C

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Vgs (Max) :

±20V

Turn-Off Delay Time :

15 ns

Product Status :

Active

Length :

4.6mm

Power Dissipation-Max :

1.6W Ta

Current - Continuous Drain (Id) @ 25°C :

630mA Tj

RoHS :

Details

Pin Count :

3 +Tab

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Product Type :

MOSFET