TP2502N8-G
- Mfr.Part #
- TP2502N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 630MA TO243AA
- Stock
- 40,832
- In Stock :
- 40,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 630mA
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Pin Count :
- 3 +Tab
- Power Dissipation-Max :
- 1.6W Ta
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 0.63A
- Rise Time :
- 11ns
- Transistor Polarity :
- P-Channel
- Number of Pins :
- 4
- Polarity :
- P
- Fall Time (Typ) :
- 11 ns
- Weight :
- 52.786812mg
- Terminal Form :
- Flat
- Turn-Off Delay Time :
- 15 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Pulsed Drain Current-Max (IDM) :
- 3.3A
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Type :
- Power MOSFET
- Drain-source On Resistance-Max :
- 2Ohm
- Rad Hardened :
- No
- Case Connection :
- DRAIN
- Brand :
- Microchip Technology
- Product Category :
- MOSFET
- Transistor Type :
- 1 P-Channel
- Mounting Style :
- SMD/SMT
- Gate-Source Voltage (Max) :
- ±20(V)
- Channel Type :
- P
- Base Product Number :
- TP2502
- Drain-Source On-Volt :
- 20(V)
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Maximum Operating Temperature :
- + 150 C
- Height :
- 1.6mm
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.6W
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- TO-243AA (SOT-89)
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Terminal Finish :
- Matte Tin (Sn)
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 6 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Package Type :
- SOT-89
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 20V
- Continuous Drain Current :
- 3.3(A)
- Manufacturer :
- Microchip
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 10 ns
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Length :
- 4.6mm
- Number of Channels :
- 1 Channel
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Subcategory :
- MOSFETs
- Minimum Operating Temperature :
- - 55 C
- Product :
- MOSFET Small Signal
- Drain to Source Breakdown Voltage :
- -20V
- Operating Temp Range :
- -55C to 150C
- Transistor Element Material :
- SILICON
- Continuous Drain Current Id :
- 630
- Width :
- 2.6mm
- Power Dissipation (Max) :
- 1.6W (Ta)
- Series :
- --
- Operating Temperature Classification :
- Military
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Tj
- Published :
- 2008
- Number of Terminations :
- 3
- RoHS :
- Details
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- TP2502N8-G

P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA
TP2502N8-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
TP2502N8-G Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)
TP2502N8-G Applications
There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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