TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
0.63A
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
Manufacturer :
Microchip
Width :
2.6mm
Base Product Number :
TP2502
Additional Feature :
LOGIC LEVEL COMPATIBLE
Terminal Form :
Flat
Polarity :
P
Type :
Power MOSFET
Fall Time (Typ) :
11 ns
Continuous Drain Current :
3.3(A)
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Channel Mode :
Enhancement
Height :
1.6mm
Rad Hardened :
No
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Power Dissipation :
1.6W
JESD-30 Code :
R-PSSO-F3
Qualification Status :
Not Qualified
Subcategory :
MOSFETs
Transistor Type :
1 P-Channel
Number of Elements :
1
Channel Type :
P
Package / Case :
TO-243AA
Mounting Type :
Surface Mount
Series :
--
Mounting :
Surface Mount
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
40
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Continuous Drain Current Id :
630
Transistor Polarity :
P-Channel
Turn-Off Delay Time :
15 ns
JESD-609 Code :
e3
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Rise Time :
11ns
Transistor Element Material :
SILICON
Drain-Source On-Volt :
20(V)
Drain to Source Breakdown Voltage :
-20V
Power Dissipation (Max) :
1.6W (Ta)
Continuous Drain Current (ID) :
630mA
Brand :
Microchip Technology
Pulsed Drain Current-Max (IDM) :
3.3A
Product Category :
MOSFET
Transistor Application :
SWITCHING
Pin Count :
3 +Tab
Supplier Device Package :
TO-243AA (SOT-89)
Length :
4.6mm
Product Status :
Active
Factory Lead Time :
6 Weeks
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1 Channel
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
RoHS :
Details
Turn On Delay Time :
10 ns
Weight :
52.786812mg
Case Connection :
DRAIN
Gate-Source Voltage (Max) :
±20(V)
Number of Pins :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn)
Operating Temp Range :
-55C to 150C
Drain-source On Resistance-Max :
2Ohm
Power Dissipation-Max :
1.6W Ta
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Operating Temperature Classification :
Military
Package Type :
SOT-89
Peak Reflow Temperature (Cel) :
260
Drain to Source Voltage (Vdss) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Element Configuration :
Single
Product :
MOSFET Small Signal
Configuration :
Single
Mount :
Surface Mount
Published :
2008
Mounting Style :
SMD/SMT
FET Type :
P-Channel
Maximum Operating Temperature :
+ 150 C
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Type:Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-243AA, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Pins:4, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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