TP2502N8-G
- Mfr.Part #
- TP2502N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 630MA TO243AA
- Stock
- 40,832
- In Stock :
- 40,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Turn On Delay Time :
- 10 ns
- Drain to Source Breakdown Voltage :
- -20V
- Manufacturer :
- Microchip
- Element Configuration :
- Single
- Polarity :
- P
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 1.6W
- Package / Case :
- TO-243AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 4
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- 1 P-Channel
- Operating Temperature Classification :
- Military
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Qualification Status :
- Not Qualified
- Brand :
- Microchip Technology
- Number of Channels :
- 1 Channel
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Product :
- MOSFET Small Signal
- Mount :
- Surface Mount
- Mounting Style :
- SMD/SMT
- Rad Hardened :
- No
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Terminal Form :
- Flat
- Channel Mode :
- Enhancement
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 630mA
- Drain-Source On-Volt :
- 20(V)
- Fall Time (Typ) :
- 11 ns
- Channel Type :
- P
- Base Product Number :
- TP2502
- Supplier Device Package :
- TO-243AA (SOT-89)
- Height :
- 1.6mm
- Package Type :
- SOT-89
- Pulsed Drain Current-Max (IDM) :
- 3.3A
- Transistor Polarity :
- P-Channel
- Power Dissipation (Max) :
- 1.6W (Ta)
- Number of Terminations :
- 3
- FET Feature :
- --
- Gate-Source Voltage (Max) :
- ±20(V)
- Continuous Drain Current Id :
- 630
- Width :
- 2.6mm
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 11ns
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 20V
- Configuration :
- Single
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 0.63A
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Weight :
- 52.786812mg
- Published :
- 2008
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Series :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Drain-source On Resistance-Max :
- 2Ohm
- Continuous Drain Current :
- 3.3(A)
- JESD-30 Code :
- R-PSSO-F3
- Subcategory :
- MOSFETs
- Type :
- Power MOSFET
- Operating Temp Range :
- -55C to 150C
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 15 ns
- Product Status :
- Active
- Length :
- 4.6mm
- Power Dissipation-Max :
- 1.6W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Tj
- RoHS :
- Details
- Pin Count :
- 3 +Tab
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- Datasheets
- TP2502N8-G

P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA
TP2502N8-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
TP2502N8-G Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)
TP2502N8-G Applications
There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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