TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
0.63A
Channel Type :
P
Package / Case :
TO-243AA
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Drain-source On Resistance-Max :
2Ohm
Weight :
52.786812mg
Transistor Type :
1 P-Channel
Mount :
Surface Mount
Number of Pins :
4
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
11 ns
Drain to Source Breakdown Voltage :
-20V
JESD-30 Code :
R-PSSO-F3
Mounting Type :
Surface Mount
Terminal Finish :
Matte Tin (Sn)
Channel Mode :
Enhancement
Brand :
Microchip Technology
Supplier Device Package :
TO-243AA (SOT-89)
Series :
--
Rise Time :
11ns
Pulsed Drain Current-Max (IDM) :
3.3A
Number of Channels :
1 Channel
Continuous Drain Current :
3.3(A)
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
Terminal Form :
Flat
Peak Reflow Temperature (Cel) :
260
Turn-Off Delay Time :
15 ns
Factory Lead Time :
6 Weeks
Number of Terminations :
3
Mounting :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
LOGIC LEVEL COMPATIBLE
Height :
1.6mm
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Package Type :
SOT-89
Length :
4.6mm
Turn On Delay Time :
10 ns
Power Dissipation :
1.6W
Continuous Drain Current Id :
630
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Power Dissipation-Max :
1.6W Ta
Maximum Operating Temperature :
+ 150 C
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
Configuration :
Single
Power Dissipation (Max) :
1.6W (Ta)
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
TP2502
Type :
Power MOSFET
Product Status :
Active
RoHS :
Details
Drain-Source On-Volt :
20(V)
Drain to Source Voltage (Vdss) :
20V
Published :
2008
FET Feature :
--
Product :
MOSFET Small Signal
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
JESD-609 Code :
e3
Rad Hardened :
No
Pin Count :
3 +Tab
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Polarity :
P
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Number of Elements :
1
Transistor Polarity :
P-Channel
Operating Temp Range :
-55C to 150C
Subcategory :
MOSFETs
Operating Temperature Classification :
Military
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Width :
2.6mm
Gate-Source Voltage (Max) :
±20(V)
FET Type :
P-Channel
Mounting Style :
SMD/SMT
Continuous Drain Current (ID) :
630mA
Manufacturer :
Microchip
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Pins:4, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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