TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Manufacturer :
Microchip
Power Dissipation (Max) :
1.6W (Ta)
Transistor Polarity :
P-Channel
Additional Feature :
LOGIC LEVEL COMPATIBLE
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Configuration :
Single
Height :
1.6mm
Base Product Number :
TP2502
Product :
MOSFET Small Signal
Drain to Source Breakdown Voltage :
-20V
Continuous Drain Current :
3.3(A)
Package / Case :
TO-243AA
Factory Lead Time :
6 Weeks
Width :
2.6mm
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
Vgs (Max) :
±20V
Mount :
Surface Mount
Transistor Type :
1 P-Channel
Continuous Drain Current Id :
630
Mounting Style :
SMD/SMT
Terminal Form :
Flat
Operating Temperature Classification :
Military
Turn On Delay Time :
10 ns
Fall Time (Typ) :
11 ns
Gate-Source Voltage (Max) :
±20(V)
Number of Terminations :
3
Minimum Operating Temperature :
- 55 C
Brand :
Microchip Technology
Pulsed Drain Current-Max (IDM) :
3.3A
Drain-Source On-Volt :
20(V)
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Rad Hardened :
No
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Mounting Type :
Surface Mount
Turn-Off Delay Time :
15 ns
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Continuous Drain Current (ID) :
630mA
Series :
--
Operating Temp Range :
-55C to 150C
FET Type :
P-Channel
JESD-30 Code :
R-PSSO-F3
Peak Reflow Temperature (Cel) :
260
Length :
4.6mm
RoHS :
Details
Weight :
52.786812mg
Power Dissipation-Max :
1.6W Ta
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
2Ohm
Channel Type :
P
Power Dissipation :
1.6W
Mounting :
Surface Mount
Element Configuration :
Single
Transistor Application :
SWITCHING
Subcategory :
MOSFETs
Published :
2008
ECCN Code :
EAR99
Case Connection :
DRAIN
Type :
Power MOSFET
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
TO-243AA (SOT-89)
Product Category :
MOSFET
Number of Channels :
1 Channel
Polarity :
P
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Operating Mode :
ENHANCEMENT MODE
Pin Count :
3 +Tab
FET Feature :
--
Rise Time :
11ns
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Drain Current-Max (Abs) (ID) :
0.63A
Number of Pins :
4
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Drain to Source Voltage (Vdss) :
20V
Package Type :
SOT-89
Product Status :
Active
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Terminations:3, Mounting Type:Surface Mount, Type:Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:4, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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