TP2502N8-G
- Mfr.Part #
- TP2502N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 630MA TO243AA
- Stock
- 40,832
- In Stock :
- 40,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Product Type :
- MOSFET
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 0.63A
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Tj
- Manufacturer :
- Microchip
- Width :
- 2.6mm
- Base Product Number :
- TP2502
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Terminal Form :
- Flat
- Polarity :
- P
- Type :
- Power MOSFET
- Fall Time (Typ) :
- 11 ns
- Continuous Drain Current :
- 3.3(A)
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Height :
- 1.6mm
- Rad Hardened :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Power Dissipation :
- 1.6W
- JESD-30 Code :
- R-PSSO-F3
- Qualification Status :
- Not Qualified
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 P-Channel
- Number of Elements :
- 1
- Channel Type :
- P
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Series :
- --
- Mounting :
- Surface Mount
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Continuous Drain Current Id :
- 630
- Transistor Polarity :
- P-Channel
- Turn-Off Delay Time :
- 15 ns
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 11ns
- Transistor Element Material :
- SILICON
- Drain-Source On-Volt :
- 20(V)
- Drain to Source Breakdown Voltage :
- -20V
- Power Dissipation (Max) :
- 1.6W (Ta)
- Continuous Drain Current (ID) :
- 630mA
- Brand :
- Microchip Technology
- Pulsed Drain Current-Max (IDM) :
- 3.3A
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Pin Count :
- 3 +Tab
- Supplier Device Package :
- TO-243AA (SOT-89)
- Length :
- 4.6mm
- Product Status :
- Active
- Factory Lead Time :
- 6 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1 Channel
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- RoHS :
- Details
- Turn On Delay Time :
- 10 ns
- Weight :
- 52.786812mg
- Case Connection :
- DRAIN
- Gate-Source Voltage (Max) :
- ±20(V)
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temp Range :
- -55C to 150C
- Drain-source On Resistance-Max :
- 2Ohm
- Power Dissipation-Max :
- 1.6W Ta
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Operating Temperature Classification :
- Military
- Package Type :
- SOT-89
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Voltage (Vdss) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Element Configuration :
- Single
- Product :
- MOSFET Small Signal
- Configuration :
- Single
- Mount :
- Surface Mount
- Published :
- 2008
- Mounting Style :
- SMD/SMT
- FET Type :
- P-Channel
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- TP2502N8-G

P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA
TP2502N8-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
TP2502N8-G Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)
TP2502N8-G Applications
There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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