TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
P-Channel
Peak Reflow Temperature (Cel) :
260
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Rad Hardened :
No
Number of Terminations :
3
Configuration :
Single
Power Dissipation-Max :
1.6W Ta
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
3.3A
Mounting :
Surface Mount
Base Product Number :
TP2502
Product Category :
MOSFET
Brand :
Microchip Technology
Product Status :
Active
Mount :
Surface Mount
Package / Case :
TO-243AA
Transistor Type :
1 P-Channel
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
JESD-609 Code :
e3
Gate-Source Voltage (Max) :
±20(V)
Published :
2008
Continuous Drain Current (ID) :
630mA
Width :
2.6mm
Operating Temp Range :
-55C to 150C
Type :
Power MOSFET
Additional Feature :
LOGIC LEVEL COMPATIBLE
Element Configuration :
Single
Number of Pins :
4
Height :
1.6mm
Case Connection :
DRAIN
Subcategory :
MOSFETs
Terminal Form :
Flat
Operating Temperature Classification :
Military
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Turn-Off Delay Time :
15 ns
Package Type :
SOT-89
Power Dissipation :
1.6W
Weight :
52.786812mg
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
20V
Pin Count :
3 +Tab
FET Type :
P-Channel
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
0.63A
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Channel Type :
P
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
-20V
Series :
--
Product Type :
MOSFET
Drain-source On Resistance-Max :
2Ohm
Length :
4.6mm
Supplier Device Package :
TO-243AA (SOT-89)
Continuous Drain Current Id :
630
Continuous Drain Current :
3.3(A)
Turn On Delay Time :
10 ns
Maximum Operating Temperature :
+ 150 C
Manufacturer :
Microchip
Polarity :
P
Drain-Source On-Volt :
20(V)
Product :
MOSFET Small Signal
Vgs (Max) :
±20V
Factory Lead Time :
6 Weeks
RoHS :
Details
JESD-30 Code :
R-PSSO-F3
Power Dissipation (Max) :
1.6W (Ta)
Rise Time :
11ns
Fall Time (Typ) :
11 ns
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Mounting Style :
SMD/SMT
ECCN Code :
EAR99
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-243AA, Type:Power MOSFET, Number of Pins:4, Number of Channels:1 Channel, Mounting Type:Surface Mount, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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