TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Length :
4.6mm
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
TO-243AA (SOT-89)
Transistor Type :
1 P-Channel
Continuous Drain Current :
3.3(A)
Published :
2008
Number of Terminations :
3
Width :
2.6mm
Product Category :
MOSFET
Element Configuration :
Single
Channel Type :
P
Drain to Source Voltage (Vdss) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Operating Temp Range :
-55C to 150C
Minimum Operating Temperature :
- 55 C
Packaging :
Tape and Reel (TR)
Continuous Drain Current Id :
630
Height :
1.6mm
Additional Feature :
LOGIC LEVEL COMPATIBLE
FET Feature :
--
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
-20V
Number of Channels :
1 Channel
Operating Temperature Classification :
Military
Gate-Source Voltage (Max) :
±20(V)
Configuration :
Single
Mounting :
Surface Mount
Manufacturer :
Microchip
Drain-source On Resistance-Max :
2Ohm
Package / Case :
TO-243AA
Subcategory :
MOSFETs
Rad Hardened :
No
Terminal Form :
Flat
Power Dissipation :
1.6W
Qualification Status :
Not Qualified
Rise Time :
11ns
Maximum Operating Temperature :
+ 150 C
Package Type :
SOT-89
Channel Mode :
Enhancement
Type :
Power MOSFET
Number of Pins :
4
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
3.3A
ECCN Code :
EAR99
Brand :
Microchip Technology
Mounting Style :
SMD/SMT
Base Product Number :
TP2502
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
JESD-609 Code :
e3
Turn-Off Delay Time :
15 ns
Factory Lead Time :
6 Weeks
Product :
MOSFET Small Signal
Mount :
Surface Mount
FET Type :
P-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
P
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain Current-Max (Abs) (ID) :
0.63A
Gate to Source Voltage (Vgs) :
20V
Pin Count :
3 +Tab
Power Dissipation (Max) :
1.6W (Ta)
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Weight :
52.786812mg
Peak Reflow Temperature (Cel) :
260
Turn On Delay Time :
10 ns
Fall Time (Typ) :
11 ns
JESD-30 Code :
R-PSSO-F3
Series :
--
Continuous Drain Current (ID) :
630mA
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Matte Tin (Sn)
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Transistor Polarity :
P-Channel
Drain-Source On-Volt :
20(V)
Product Type :
MOSFET
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
Power Dissipation-Max :
1.6W Ta
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:TO-243AA, Type:Power MOSFET, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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