TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Power Dissipation (Max) :
1.6W (Ta)
Mount :
Surface Mount
Product :
MOSFET Small Signal
Series :
--
Configuration :
Single
Vgs (Max) :
±20V
Terminal Form :
Flat
Operating Temperature Classification :
Military
Mounting Style :
SMD/SMT
Terminal Finish :
Matte Tin (Sn)
Package Type :
SOT-89
Time@Peak Reflow Temperature-Max (s) :
40
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Drain to Source Voltage (Vdss) :
20V
Weight :
52.786812mg
Element Configuration :
Single
Power Dissipation :
1.6W
Mounting :
Surface Mount
Channel Type :
P
Qualification Status :
Not Qualified
Type :
Power MOSFET
Factory Lead Time :
6 Weeks
Number of Channels :
1 Channel
Brand :
Microchip Technology
Continuous Drain Current (ID) :
630mA
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Channel Mode :
Enhancement
Peak Reflow Temperature (Cel) :
260
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Fall Time (Typ) :
11 ns
Base Product Number :
TP2502
Manufacturer :
Microchip
Continuous Drain Current Id :
630
Maximum Operating Temperature :
+ 150 C
Rise Time :
11ns
Number of Elements :
1
Package / Case :
TO-243AA
Mounting Type :
Surface Mount
Continuous Drain Current :
3.3(A)
RoHS :
Details
Case Connection :
DRAIN
Operating Temp Range :
-55C to 150C
Power Dissipation-Max :
1.6W Ta
Gate-Source Voltage (Max) :
±20(V)
Drain-source On Resistance-Max :
2Ohm
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
Supplier Device Package :
TO-243AA (SOT-89)
Rad Hardened :
No
Length :
4.6mm
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Transistor Type :
1 P-Channel
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
FET Feature :
--
JESD-609 Code :
e3
Published :
2008
Height :
1.6mm
Turn On Delay Time :
10 ns
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
4
FET Type :
P-Channel
Subcategory :
MOSFETs
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Pulsed Drain Current-Max (IDM) :
3.3A
Minimum Operating Temperature :
- 55 C
Drain to Source Breakdown Voltage :
-20V
Width :
2.6mm
JESD-30 Code :
R-PSSO-F3
Product Type :
MOSFET
Drain-Source On-Volt :
20(V)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Turn-Off Delay Time :
15 ns
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Pin Count :
3 +Tab
Product Status :
Active
Transistor Polarity :
P-Channel
Polarity :
P
Additional Feature :
LOGIC LEVEL COMPATIBLE
Drain Current-Max (Abs) (ID) :
0.63A
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Type:Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Number of Terminations:3, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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