TP2502N8-G

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Mfr.Part #
TP2502N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 20V 630MA TO243AA
Stock
40,832
In Stock :
40,832

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
6 Weeks
Continuous Drain Current :
3.3(A)
Power Dissipation-Max :
1.6W Ta
Transistor Polarity :
P-Channel
Mounting Type :
Surface Mount
Turn On Delay Time :
10 ns
Gate-Source Voltage (Max) :
±20(V)
Drain to Source Breakdown Voltage :
-20V
Brand :
Microchip Technology
Maximum Operating Temperature :
+ 150 C
FET Feature :
--
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Base Product Number :
TP2502
Manufacturer :
Microchip
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Product Status :
Active
Polarity :
P
Terminal Finish :
Matte Tin (Sn)
Weight :
52.786812mg
Fall Time (Typ) :
11 ns
Number of Pins :
4
Subcategory :
MOSFETs
Drain to Source Voltage (Vdss) :
20V
Number of Channels :
1 Channel
Product Type :
MOSFET
Drain-source On Resistance-Max :
2Ohm
Transistor Type :
1 P-Channel
Gate to Source Voltage (Vgs) :
20V
Length :
4.6mm
Pin Count :
3 +Tab
Operating Temp Range :
-55C to 150C
Package / Case :
TO-243AA
Pulsed Drain Current-Max (IDM) :
3.3A
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e3
Series :
--
Element Configuration :
Single
Mount :
Surface Mount
Product Category :
MOSFET
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Channel Mode :
Enhancement
Operating Temperature Classification :
Military
Height :
1.6mm
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Mounting :
Surface Mount
Power Dissipation :
1.6W
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Product :
MOSFET Small Signal
Channel Type :
P
Turn-Off Delay Time :
15 ns
Peak Reflow Temperature (Cel) :
260
Current - Continuous Drain (Id) @ 25°C :
630mA Tj
Supplier Device Package :
TO-243AA (SOT-89)
Packaging :
Tape and Reel (TR)
Drain Current-Max (Abs) (ID) :
0.63A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Rise Time :
11ns
Number of Elements :
1
Drain-Source On-Volt :
20(V)
Case Connection :
DRAIN
RoHS :
Details
Operating Temperature :
-55°C~150°C TJ
Width :
2.6mm
JESD-30 Code :
R-PSSO-F3
Qualification Status :
Not Qualified
Rad Hardened :
No
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
1.6W (Ta)
ECCN Code :
EAR99
Type :
Power MOSFET
Continuous Drain Current (ID) :
630mA
Published :
2008
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 20V
Package Type :
SOT-89
Number of Terminations :
3
Continuous Drain Current Id :
630
Terminal Form :
Flat
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Style :
SMD/SMT
Configuration :
Single
Additional Feature :
LOGIC LEVEL COMPATIBLE
Datasheets
TP2502N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:4, Number of Channels:1 Channel, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Number of Terminations:3, TP2502N8-G pinout, TP2502N8-G datasheet PDF, TP2502N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2502N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2502N8-G


P-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 125pF @ 20V 20V TO-243AA

TP2502N8-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 125pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 630mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.63A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3.3A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

TP2502N8-G Features


a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 3.3A.
a 20V drain to source voltage (Vdss)


TP2502N8-G Applications


There are a lot of Microchip Technology
TP2502N8-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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