TN5335N8-G
- Mfr.Part #
- TN5335N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 230MA TO243AA
- Stock
- 10,749
- In Stock :
- 10,749
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- FET
- Series :
- --
- Factory Lead Time :
- 18 Weeks
- Drain to Source Voltage (Vdss) :
- 350V
- Package / Case :
- TO-243AA
- Case Connection :
- DRAIN
- Length :
- 4.6mm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Product Status :
- Active
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1.6mm
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Product Category :
- MOSFET
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Channel Type :
- N
- Continuous Drain Current Id :
- 230
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 25 ns
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 20 ns
- Manufacturer :
- Microchip
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Supplier Device Package :
- TO-243AA (SOT-89)
- Rise Time :
- 15ns
- Weight :
- 52.786812mg
- Element Configuration :
- Single
- Product :
- MOSFET Small Signal
- Width :
- 2.6mm
- Power Dissipation (Max) :
- 1.6W (Ta)
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 10V
- Continuous Drain Current (ID) :
- 230mA
- Base Product Number :
- TN5335
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Tj
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSSO-F3
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 200mA, 10V
- Terminal Form :
- Flat
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Channels :
- 1
- Configuration :
- Single
- Fall Time (Typ) :
- 15 ns
- Transistor Polarity :
- N-Channel
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Drain to Source Breakdown Voltage :
- 350V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.6W Ta
- Brand :
- Microchip Technology
- Published :
- 2013
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.6W
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- TN5335N8-G

N-Channel Tape & Reel (TR) 15 Ω @ 200mA, 10V ±20V 110pF @ 25V 350V TO-243AA
TN5335N8-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 110pF @ 25V.This device conducts a continuous drain current (ID) of 230mA, which is the maximum continuous current transistor can conduct.Using VGS=350V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 350V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 25 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 350V.In order to reduce power consumption, this device uses a drive voltage of 3V 10V volts (3V 10V).
TN5335N8-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 25 ns
a 350V drain to source voltage (Vdss)
TN5335N8-G Applications
There are a lot of Microchip Technology
TN5335N8-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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