TN5335N8-G

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Mfr.Part #
TN5335N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 230MA TO243AA
Stock
10,749
In Stock :
10,749

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
FET
Series :
--
Factory Lead Time :
18 Weeks
Drain to Source Voltage (Vdss) :
350V
Package / Case :
TO-243AA
Case Connection :
DRAIN
Length :
4.6mm
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
FET Type :
N-Channel
Product Status :
Active
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
2V @ 1mA
Time@Peak Reflow Temperature-Max (s) :
40
Height :
1.6mm
Channel Mode :
Enhancement
RoHS :
Details
Product Category :
MOSFET
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Qualification Status :
Not Qualified
Channel Type :
N
Continuous Drain Current Id :
230
Mount :
Surface Mount
Transistor Application :
SWITCHING
Turn-Off Delay Time :
25 ns
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
20 ns
Manufacturer :
Microchip
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Supplier Device Package :
TO-243AA (SOT-89)
Rise Time :
15ns
Weight :
52.786812mg
Element Configuration :
Single
Product :
MOSFET Small Signal
Width :
2.6mm
Power Dissipation (Max) :
1.6W (Ta)
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
3V 10V
Continuous Drain Current (ID) :
230mA
Base Product Number :
TN5335
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
230mA Tj
ECCN Code :
EAR99
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSSO-F3
Rds On (Max) @ Id, Vgs :
15 Ω @ 200mA, 10V
Terminal Form :
Flat
Minimum Operating Temperature :
- 55 C
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Channels :
1
Configuration :
Single
Fall Time (Typ) :
15 ns
Transistor Polarity :
N-Channel
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain to Source Breakdown Voltage :
350V
Transistor Element Material :
SILICON
Power Dissipation-Max :
1.6W Ta
Brand :
Microchip Technology
Published :
2013
Gate to Source Voltage (Vgs) :
20V
Maximum Operating Temperature :
+ 150 C
Packaging :
Tape and Reel (TR)
Power Dissipation :
1.6W
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
TN5335N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN5335N8-G from Chip IC,where excellence meets affordability. This product stands out with its Type:FET, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1, Mounting Type:Surface Mount, TN5335N8-G pinout, TN5335N8-G datasheet PDF, TN5335N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN5335N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN5335N8-G


N-Channel Tape & Reel (TR) 15 Ω @ 200mA, 10V ±20V 110pF @ 25V 350V TO-243AA

TN5335N8-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 110pF @ 25V.This device conducts a continuous drain current (ID) of 230mA, which is the maximum continuous current transistor can conduct.Using VGS=350V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 350V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 25 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 350V.In order to reduce power consumption, this device uses a drive voltage of 3V 10V volts (3V 10V).

TN5335N8-G Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 25 ns
a 350V drain to source voltage (Vdss)


TN5335N8-G Applications


There are a lot of Microchip Technology
TN5335N8-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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