TN5325N3-G

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Mfr.Part #
TN5325N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 250V 215MA TO92-3
Stock
7,821
In Stock :
7,821

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Bag
Maximum Operating Temperature :
+ 150 C
Base Product Number :
TN5325
Width :
4.19mm
Power Dissipation :
740mW
RoHS :
Details
Lead Free :
Lead Free
Weight :
453.59237mg
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Type :
Power MOSFET
Supplier Device Package :
TO-92-3
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
7Ohm
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
7 Ω @ 1A, 10V
Mounting Type :
Through Hole
Operating Temp Range :
-55C to 150C
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Terminal Position :
BOTTOM
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
18 Weeks
Package Type :
TO-92
Packaging :
Bulk
ECCN Code :
EAR99
Rad Hardened :
No
Brand :
Microchip Technology / Atmel
Qualification :
-
Number of Channels :
1
Drain to Source Breakdown Voltage :
250V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
Drain-Source On-Volt :
250(V)
FET Feature :
--
Product Status :
Active
Element Configuration :
Single
Number of Pins :
3
Turn-Off Delay Time :
25 ns
Fall Time (Typ) :
15 ns
Manufacturer :
Microchip
Transistor Polarity :
N-Channel
Gate-Source Voltage (Max) :
±20(V)
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
250V
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Min Operating Temperature :
-55°C
Height :
5.33mm
Operating Temperature :
--
Vgs(th) (Max) @ Id :
2V @ 1mA
Continuous Drain Current Id :
215
Max Operating Temperature :
150°C
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current :
0.215(A)
Operating Temperature Classification :
Military
Mount :
Through Hole
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Configuration :
Single
Channel Type :
N
Continuous Drain Current (ID) :
215mA
Rise Time :
15ns
Additional Feature :
LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Length :
5.21mm
Subcategory :
MOSFETs
Turn On Delay Time :
20 ns
Product :
MOSFET Small Signal
Series :
--
Product Category :
MOSFET
Mounting :
Through Hole
Published :
2009
Radiation Hardening :
No
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
215mA Ta
Polarity :
N
Power Dissipation (Max) :
740mW (Ta)
Power Dissipation-Max :
740mW Ta
Datasheets
TN5325N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N3-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, Mounting Type:Through Hole, Number of Channels:1, Number of Pins:3, Number of Terminations:3, Operating Temperature:--, TN5325N3-G pinout, TN5325N3-G datasheet PDF, TN5325N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN5325N3-G


N-Channel Bulk 7 Ω @ 1A, 10V ±20V 110pF @ 25V 250V TO-226-3, TO-92-3 (TO-226AA)

TN5325N3-G Overview


A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 215mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

TN5325N3-G Features


a continuous drain current (ID) of 215mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
a 250V drain to source voltage (Vdss)


TN5325N3-G Applications


There are a lot of Microchip Technology
TN5325N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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