TN5325N3-G

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Mfr.Part #
TN5325N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 250V 215MA TO92-3
Stock
7,821
In Stock :
7,821

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
FET Type :
N-Channel
Width :
4.19mm
FET Feature :
--
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification :
-
Drain-Source On-Volt :
250(V)
Supplier Device Package :
TO-92-3
Turn-Off Delay Time :
25 ns
Turn On Delay Time :
20 ns
Drain to Source Voltage (Vdss) :
250V
Rds On (Max) @ Id, Vgs :
7 Ω @ 1A, 10V
Product Status :
Active
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Rise Time :
15ns
Product Category :
MOSFET
Continuous Drain Current Id :
215
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
--
Power Dissipation-Max :
740mW Ta
Length :
5.21mm
Type :
Power MOSFET
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
BOTTOM
Subcategory :
MOSFETs
Package Type :
TO-92
Operating Temp Range :
-55C to 150C
Published :
2009
ECCN Code :
EAR99
Min Operating Temperature :
-55°C
Rad Hardened :
No
Mounting :
Through Hole
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
215mA Ta
Element Configuration :
Single
Continuous Drain Current (ID) :
215mA
Product :
MOSFET Small Signal
Transistor Type :
1 N-Channel
Height :
5.33mm
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
250V
Number of Pins :
3
Number of Terminations :
3
Drain-source On Resistance-Max :
7Ohm
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Max Operating Temperature :
150°C
Power Dissipation (Max) :
740mW (Ta)
Brand :
Microchip Technology / Atmel
Packaging :
Bulk
Vgs (Max) :
±20V
Fall Time (Typ) :
15 ns
Series :
--
Gate-Source Voltage (Max) :
±20(V)
Configuration :
Single
Radiation Hardening :
No
Channel Type :
N
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS :
Details
Channel Mode :
Enhancement
Base Product Number :
TN5325
Weight :
453.59237mg
Mount :
Through Hole
Operating Temperature Classification :
Military
Factory Lead Time :
18 Weeks
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
Package :
Bag
Vgs(th) (Max) @ Id :
2V @ 1mA
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current :
0.215(A)
Manufacturer :
Microchip
Polarity :
N
Mounting Style :
Through Hole
Number of Elements :
1
Power Dissipation :
740mW
Pin Count :
3
Product Type :
MOSFET
Datasheets
TN5325N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:--, Type:Power MOSFET, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, TN5325N3-G pinout, TN5325N3-G datasheet PDF, TN5325N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN5325N3-G


N-Channel Bulk 7 Ω @ 1A, 10V ±20V 110pF @ 25V 250V TO-226-3, TO-92-3 (TO-226AA)

TN5325N3-G Overview


A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 215mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

TN5325N3-G Features


a continuous drain current (ID) of 215mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
a 250V drain to source voltage (Vdss)


TN5325N3-G Applications


There are a lot of Microchip Technology
TN5325N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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