TN5325N3-G
- Mfr.Part #
- TN5325N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 215MA TO92-3
- Stock
- 7,821
- In Stock :
- 7,821
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
- FET Type :
- N-Channel
- Width :
- 4.19mm
- FET Feature :
- --
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification :
- -
- Drain-Source On-Volt :
- 250(V)
- Supplier Device Package :
- TO-92-3
- Turn-Off Delay Time :
- 25 ns
- Turn On Delay Time :
- 20 ns
- Drain to Source Voltage (Vdss) :
- 250V
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 1A, 10V
- Product Status :
- Active
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Rise Time :
- 15ns
- Product Category :
- MOSFET
- Continuous Drain Current Id :
- 215
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- --
- Power Dissipation-Max :
- 740mW Ta
- Length :
- 5.21mm
- Type :
- Power MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- BOTTOM
- Subcategory :
- MOSFETs
- Package Type :
- TO-92
- Operating Temp Range :
- -55C to 150C
- Published :
- 2009
- ECCN Code :
- EAR99
- Min Operating Temperature :
- -55°C
- Rad Hardened :
- No
- Mounting :
- Through Hole
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 215mA Ta
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 215mA
- Product :
- MOSFET Small Signal
- Transistor Type :
- 1 N-Channel
- Height :
- 5.33mm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 250V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 7Ohm
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Operating Temperature :
- 150°C
- Power Dissipation (Max) :
- 740mW (Ta)
- Brand :
- Microchip Technology / Atmel
- Packaging :
- Bulk
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 15 ns
- Series :
- --
- Gate-Source Voltage (Max) :
- ±20(V)
- Configuration :
- Single
- Radiation Hardening :
- No
- Channel Type :
- N
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS :
- Details
- Channel Mode :
- Enhancement
- Base Product Number :
- TN5325
- Weight :
- 453.59237mg
- Mount :
- Through Hole
- Operating Temperature Classification :
- Military
- Factory Lead Time :
- 18 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Package :
- Bag
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current :
- 0.215(A)
- Manufacturer :
- Microchip
- Polarity :
- N
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- Power Dissipation :
- 740mW
- Pin Count :
- 3
- Product Type :
- MOSFET
- Datasheets
- TN5325N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 7 Ω @ 1A, 10V ±20V 110pF @ 25V 250V TO-226-3, TO-92-3 (TO-226AA)
TN5325N3-G Overview
A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 215mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
TN5325N3-G Features
a continuous drain current (ID) of 215mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
a 250V drain to source voltage (Vdss)
TN5325N3-G Applications
There are a lot of Microchip Technology
TN5325N3-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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