TN5325N3-G

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Mfr.Part #
TN5325N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 250V 215MA TO92-3
Stock
7,821
In Stock :
7,821

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temp Range :
-55C to 150C
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
250V
Weight :
453.59237mg
Rad Hardened :
No
Number of Channels :
1
Operating Temperature Classification :
Military
Number of Terminations :
3
ECCN Code :
EAR99
FET Type :
N-Channel
Width :
4.19mm
Power Dissipation :
740mW
Factory Lead Time :
18 Weeks
Number of Pins :
3
Product Type :
MOSFET
Package Type :
TO-92
Terminal Finish :
Matte Tin (Sn)
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
250V
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current :
0.215(A)
RoHS :
Details
FET Feature :
--
Continuous Drain Current Id :
215
Turn On Delay Time :
20 ns
Gate-Source Voltage (Max) :
±20(V)
Power Dissipation-Max :
740mW Ta
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
Packaging :
Bulk
Rise Time :
15ns
Configuration :
Single
Terminal Position :
BOTTOM
Max Operating Temperature :
150°C
Fall Time (Typ) :
15 ns
Subcategory :
MOSFETs
Pin Count :
3
Length :
5.21mm
Height :
5.33mm
Channel Type :
N
Base Product Number :
TN5325
Rds On (Max) @ Id, Vgs :
7 Ω @ 1A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting :
Through Hole
Channel Mode :
Enhancement
Polarity :
N
Turn-Off Delay Time :
25 ns
Product Status :
Active
Drain-source On Resistance-Max :
7Ohm
Lead Free :
Lead Free
Power Dissipation (Max) :
740mW (Ta)
Drain-Source On-Volt :
250(V)
Published :
2009
Vgs(th) (Max) @ Id :
2V @ 1mA
Type :
Power MOSFET
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS Status :
ROHS3 Compliant
Manufacturer :
Microchip
Supplier Device Package :
TO-92-3
JESD-609 Code :
e3
Brand :
Microchip Technology / Atmel
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Additional Feature :
LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Package :
Bag
Qualification :
-
Continuous Drain Current (ID) :
215mA
Transistor Application :
SWITCHING
Operating Temperature :
--
Transistor Type :
1 N-Channel
Min Operating Temperature :
-55°C
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Mounting Style :
Through Hole
Product :
MOSFET Small Signal
Current - Continuous Drain (Id) @ 25°C :
215mA Ta
Series :
--
Datasheets
TN5325N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Type:Power MOSFET, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:--, TN5325N3-G pinout, TN5325N3-G datasheet PDF, TN5325N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN5325N3-G


N-Channel Bulk 7 Ω @ 1A, 10V ±20V 110pF @ 25V 250V TO-226-3, TO-92-3 (TO-226AA)

TN5325N3-G Overview


A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 215mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

TN5325N3-G Features


a continuous drain current (ID) of 215mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
a 250V drain to source voltage (Vdss)


TN5325N3-G Applications


There are a lot of Microchip Technology
TN5325N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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