TN5335K1-G

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Mfr.Part #
TN5335K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 350V 110MA SOT23
Stock
2,668
In Stock :
2,668

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Product :
MOSFET Small Signal
Product Status :
Active
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2V @ 1mA
Feedback Cap-Max (Crss) :
22 pF
Continuous Drain Current (ID) :
110mA
Power Dissipation (Max) :
360mW (Ta)
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-236-3, SC-59, SOT-23-3
Turn-Off Delay Time :
25 ns
FET Feature :
--
Transistor Element Material :
SILICON
Rise Time :
15ns
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
350V
Number of Channels :
1
Length :
2.9mm
Contact Plating :
Tin
RoHS :
Details
Peak Reflow Temperature (Cel) :
260
Manufacturer :
Microchip
Type :
FET
Brand :
Microchip Technology / Atmel
Factory Lead Time :
18 Weeks
Mounting Style :
SMD/SMT
Element Configuration :
Single
Weight :
1.437803g
Supplier Device Package :
SOT-23 (TO-236AB)
Terminal Position :
Dual
FET Type :
N-Channel
Channel Type :
N
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain to Source Breakdown Voltage :
350V
Packaging :
Tape and Reel (TR)
Base Product Number :
TN5335
Product Category :
MOSFET
Published :
2012
Minimum Operating Temperature :
- 55 C
Turn On Delay Time :
20 ns
MSL :
MSL 1 - Unlimited
Power Dissipation-Max :
360mW Ta
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
3V 10V
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
110mA Tj
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
SWITCHING
Qualification :
-
Fall Time (Typ) :
15 ns
Number of Elements :
1
Mount :
Surface Mount
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Series :
--
Height :
950μm
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
15 Ω @ 200mA, 10V
Power Dissipation :
360mW
Number of Terminations :
3
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
ECCN Code :
EAR99
Width :
1.3mm
Number of Pins :
3
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current Id :
110
Datasheets
TN5335K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN5335K1-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Channels:1, Type:FET, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, TN5335K1-G pinout, TN5335K1-G datasheet PDF, TN5335K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN5335K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN5335K1-G


N-Channel Tape & Reel (TR) 15 Ω @ 200mA, 10V ±20V 110pF @ 25V 350V TO-236-3, SC-59, SOT-23-3

TN5335K1-G Overview


The maximum input capacitance of this device is 110pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (3V 10V), this device helps reduce its power consumption.

TN5335K1-G Features


a continuous drain current (ID) of 110mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 25 ns
a 350V drain to source voltage (Vdss)


TN5335K1-G Applications


There are a lot of Microchip Technology
TN5335K1-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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