TN5325N3-G-P002

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 25V

Turn On Delay Time :

20 ns

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

250V

Factory Lead Time :

18 Weeks

Height :

5.33mm

Drain to Source Breakdown Voltage :

250V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package :

Tape and Reel (TR)

Number of Terminations :

3

Terminal Position :

BOTTOM

Base Product Number :

TN5325

Feedback Cap-Max (Crss) :

23 pF

Brand :

Microchip Technology

Max Operating Temperature :

150°C

Pbfree Code :

yes

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

7Ohm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Published :

2009

RoHS :

Details

Series :

--

Turn-Off Delay Time :

25 ns

Length :

5.21mm

Weight :

453.59237mg

Operating Temperature :

--

Product Category :

MOSFET

Fall Time (Typ) :

25 ns

Product :

MOSFET Small Signal

Power Dissipation-Max :

740mW Ta

Mount :

Through Hole

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Width :

4.19mm

FET Type :

N-Channel

Subcategory :

MOSFETs

Power Dissipation (Max) :

740mW (Ta)

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Product Status :

Active

JESD-30 Code :

O-PBCY-T3

Transistor Polarity :

N-Channel

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-92-3

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Product Type :

MOSFET

Rise Time :

15ns

Continuous Drain Current (ID) :

215mA

Configuration :

Single

FET Feature :

--

Number of Elements :

1

Mounting Type :

Through Hole

Manufacturer :

Microchip

Current - Continuous Drain (Id) @ 25°C :

215mA Ta