TN5325N8-G
- Mfr.Part #
- TN5325N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 316MA TO243AA
- Stock
- 15,325
- In Stock :
- 15,325
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 15 ns
- FET Feature :
- --
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 1.6W Ta
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 25 ns
- Product :
- MOSFET Small Signal
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 1A, 10V
- Continuous Drain Current :
- 0.316(A)
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 316mA Tj
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Additional Feature :
- FAST SWITCHING
- Configuration :
- Single
- Power Dissipation :
- 1.6W
- Subcategory :
- MOSFETs
- Number of Channels :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 4.6mm
- JESD-30 Code :
- R-PSSO-F3
- Series :
- --
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3 +Tab
- Peak Reflow Temperature (Cel) :
- 260
- Drain-Source On-Volt :
- 250(V)
- Package Type :
- SOT-89
- Continuous Drain Current (ID) :
- 316mA
- RoHS :
- Details
- Operating Temp Range :
- -55C to 150C
- Mounting :
- Surface Mount
- Operating Temperature :
- --
- Height :
- 1.6mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Number of Pins :
- 4
- Manufacturer :
- Microchip
- Base Product Number :
- TN5325
- Min Operating Temperature :
- -55°C
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Operating Temperature Classification :
- Military
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Channel Type :
- N
- Width :
- 2.6mm
- Power Dissipation (Max) :
- 1.6W (Ta)
- Polarity :
- N
- Turn On Delay Time :
- 20 ns
- Rad Hardened :
- No
- Rise Time :
- 15ns
- Operating Mode :
- ENHANCEMENT MODE
- Type :
- Power MOSFET
- Gate-Source Voltage (Max) :
- ±20(V)
- ECCN Code :
- EAR99
- Brand :
- Microchip Technology
- Product Type :
- MOSFET
- Continuous Drain Current Id :
- 316
- Transistor Application :
- SWITCHING
- Max Operating Temperature :
- 150°C
- Drain-source On Resistance-Max :
- 250Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Supplier Device Package :
- TO-243AA (SOT-89)
- Mounting Style :
- SMD/SMT
- Factory Lead Time :
- 18 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Weight :
- 52.786812mg
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Product Category :
- MOSFET
- Drain to Source Breakdown Voltage :
- 250V
- Datasheets
- TN5325N8-G

N-Channel Tape & Reel (TR) 7 Ω @ 1A, 10V ±20V 110pF @ 25V 250V TO-243AA
TN5325N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 110pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 316mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
TN5325N8-G Features
a continuous drain current (ID) of 316mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
a 250V drain to source voltage (Vdss)
TN5325N8-G Applications
There are a lot of Microchip Technology
TN5325N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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