TN5325N8-G

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Mfr.Part #
TN5325N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 250V 316MA TO243AA
Stock
15,325
In Stock :
15,325

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
260
Series :
--
Continuous Drain Current (ID) :
316mA
Length :
4.6mm
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Power Dissipation (Max) :
1.6W (Ta)
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Product Status :
Active
Vgs(th) (Max) @ Id :
2V @ 1mA
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Channel Type :
N
Power Dissipation-Max :
1.6W Ta
Turn On Delay Time :
20 ns
JESD-30 Code :
R-PSSO-F3
Element Configuration :
Single
Product :
MOSFET Small Signal
Factory Lead Time :
18 Weeks
Number of Pins :
4
Published :
2009
Package / Case :
TO-243AA
Subcategory :
MOSFETs
Number of Terminations :
3
Height :
1.6mm
RoHS :
Details
Polarity :
N
Current - Continuous Drain (Id) @ 25°C :
316mA Tj
Channel Mode :
Enhancement
Base Product Number :
TN5325
Brand :
Microchip Technology
Transistor Type :
1 N-Channel
Additional Feature :
FAST SWITCHING
RoHS Status :
ROHS3 Compliant
Operating Temp Range :
-55C to 150C
Gate-Source Voltage (Max) :
±20(V)
Drain-Source On-Volt :
250(V)
Width :
2.6mm
Manufacturer :
Microchip
Mount :
Surface Mount
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
Package Type :
SOT-89
Drain-source On Resistance-Max :
250Ohm
Number of Channels :
1
Operating Temperature Classification :
Military
Product Type :
MOSFET
Maximum Operating Temperature :
+ 150 C
Power Dissipation :
1.6W
Vgs (Max) :
±20V
Configuration :
Single
Supplier Device Package :
TO-243AA (SOT-89)
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
250V
Terminal Finish :
Matte Tin (Sn)
Min Operating Temperature :
-55°C
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Continuous Drain Current Id :
316
Rds On (Max) @ Id, Vgs :
7 Ω @ 1A, 10V
Mounting Style :
SMD/SMT
Weight :
52.786812mg
Type :
Power MOSFET
Rise Time :
15ns
JESD-609 Code :
e3
Max Operating Temperature :
150°C
Drain to Source Breakdown Voltage :
250V
Rad Hardened :
No
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Turn-Off Delay Time :
25 ns
Operating Temperature :
--
Mounting :
Surface Mount
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
15 ns
Continuous Drain Current :
0.316(A)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
ECCN Code :
EAR99
Terminal Form :
Flat
Number of Elements :
1
Case Connection :
DRAIN
Pin Count :
3 +Tab
Datasheets
TN5325N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-243AA, Number of Terminations:3, Number of Channels:1, Type:Power MOSFET, Mounting Type:Surface Mount, Operating Temperature:--, TN5325N8-G pinout, TN5325N8-G datasheet PDF, TN5325N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN5325N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN5325N8-G


N-Channel Tape & Reel (TR) 7 Ω @ 1A, 10V ±20V 110pF @ 25V 250V TO-243AA

TN5325N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 110pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 316mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

TN5325N8-G Features


a continuous drain current (ID) of 316mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
a 250V drain to source voltage (Vdss)


TN5325N8-G Applications


There are a lot of Microchip Technology
TN5325N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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