TK3A90E,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Product Category :

MOSFET

Mounting Type :

Through Hole

RoHS :

Details

Subcategory :

MOSFETs

Rise Time :

25 ns

Power Dissipation (Max) :

35W (Tc)

FET Type :

N-Channel

Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Number of Channels :

1 Channel

Series :

-

Manufacturer :

Toshiba

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

FET Feature :

-

Supplier Device Package :

TO-220SIS

Mounting Style :

Through Hole

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

4.6Ohm @ 1.3A, 10V

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

4V @ 250µA

Brand :

Toshiba

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

650 pF @ 25 V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

900 V

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On, Min Rds On) :

10V

Configuration :

Single

Tradename :

MOSVIII