TK3A90E,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Package :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

RoHS :

Details

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Rise Time :

25 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Brand :

Toshiba

Mounting Style :

Through Hole

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

4.6Ohm @ 1.3A, 10V

Power Dissipation (Max) :

35W (Tc)

Vgs (Max) :

±30V

Number of Channels :

1 Channel

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

FET Feature :

-

Configuration :

Single

Drain to Source Voltage (Vdss) :

900 V

Supplier Device Package :

TO-220SIS

Operating Temperature :

150°C

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

650 pF @ 25 V

Product Category :

MOSFET

Manufacturer :

Toshiba

Mounting Type :

Through Hole

Tradename :

MOSVIII

Series :

-

Channel Mode :

Enhancement

Packaging :

Tube

Transistor Type :

1 N-Channel

FET Type :

N-Channel