TK3A65D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

650V

Rise Time :

18ns

Factory Lead Time :

16 Weeks

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

150°C TJ

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Radiation Hardening :

No

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Power Dissipation-Max :

35W Tc

Packaging :

Tube

Supplier Device Package :

TO-220SIS

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Rds On Max :

2.25 Ω

Mount :

Through Hole

Input Capacitance :

540pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Series :

π-MOSVII

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Number of Pins :

3

Published :

2009

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

2.25Ohm @ 1.5A, 10V

Continuous Drain Current (ID) :

3A