TK3A65DA(STA4,QM)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

2.5A

Series :

π-MOSVII

Rise Time :

18ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Rds On (Max) @ Id, Vgs :

2.51Ohm @ 1.3A, 10V

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

650V

Rds On Max :

2.51 Ω

Supplier Device Package :

TO-220SIS

Fall Time (Typ) :

8 ns

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Vgs (Max) :

±30V

Mount :

Through Hole

Published :

2009

Packaging :

Tube

Input Capacitance :

490pF

Power Dissipation-Max :

35W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole