TK3A60DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Power Dissipation-Max :

30W Tc

Packaging :

Tube

Fall Time (Typ) :

7 ns

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Input Capacitance :

380pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

2.8Ohm @ 1.3A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Drain to Source Voltage (Vdss) :

600V

Min Operating Temperature :

-55°C

Published :

2009

Vgs (Max) :

±30V

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

2.5A

Max Operating Temperature :

150°C

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Series :

π-MOSVII

Supplier Device Package :

TO-220SIS

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

RoHS Status :

RoHS Compliant

Rise Time :

15ns

Rds On Max :

2.8 Ω