TK3A60DA(Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Supplier Device Package :

TO-220SIS

Power Dissipation :

30W

Rds On (Max) @ Id, Vgs :

2.8Ohm @ 1.3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

380pF

Drain to Source Resistance :

2.8Ohm

Series :

π-MOSVII

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

52 Weeks

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Max Operating Temperature :

150°C

Vgs (Max) :

±30V

Power Dissipation-Max :

30W Tc

Mount :

Through Hole

FET Type :

N-Channel

Mounting Type :

Through Hole

Rds On Max :

2.8 Ω

Operating Temperature :

150°C TJ

Threshold Voltage :

2.4V

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Continuous Drain Current (ID) :

2.5A