TK39N60X,S1F
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- Mfr.Part #
- TK39N60X,S1F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38.8A TO247
- Stock
- 8,942
- In Stock ：
- 8,942
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 65 mΩ
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Package / Case :
- TO-247-3
- Turn-Off Delay Time :
- 155 ns
- Packaging :
- Tube
- Fall Time (Typ) :
- 6 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 300V
- FET Feature :
- Super Junction
- Series :
- DTMOSIV-H
- Published :
- 2014
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.9mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 38.000013g
- Factory Lead Time :
- 16 Weeks
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On (Max) @ Id, Vgs :
- 65mOhm @ 12.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-247
- Input Capacitance :
- 4.1nF
- Rise Time :
- 35ns
- Element Configuration :
- Single
- Turn On Delay Time :
- 60 ns
- Current - Continuous Drain (Id) @ 25°C :
- 38.8A Ta
- Operating Temperature :
- 150°C TJ
- Drain to Source Resistance :
- 55mOhm
- Mount :
- Through Hole
- Power Dissipation-Max :
- 270W Tc
- Continuous Drain Current (ID) :
- 38.8A
- Datasheets
- TK39N60X,S1F
N-Channel Tube 65mOhm @ 12.5A, 10V ±30V 4100pF @ 300V 85nC @ 10V 600V TO-247-3
TK39N60X,S1F Overview
A device's maximum input capacitance is 4100pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 38.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 55mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
TK39N60X,S1F Features
a continuous drain current (ID) of 38.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 155 ns
single MOSFETs transistor is 55mOhm
a 600V drain to source voltage (Vdss)
TK39N60X,S1F Applications
There are a lot of Toshiba Semiconductor and Storage
TK39N60X,S1F applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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