TK39J60W5,S1VQ
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- Mfr.Part #
- TK39J60W5,S1VQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38.8A TO3P
- Stock
- 3,636
- In Stock ：
- 3,636
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 135nC @ 10V
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±30V
- Rise Time :
- 50ns
- Rds On Max :
- 65 mΩ
- Input Capacitance :
- 4.1nF
- Vgs(th) (Max) @ Id :
- 3.7V @ 1.9mA
- Capacitance :
- 4.1nF
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 38.8A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 270W Tc
- Min Operating Temperature :
- -55°C
- FET Feature :
- Super Junction
- Drain to Source Resistance :
- 55mOhm
- Fall Time (Typ) :
- 9 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 300V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation :
- 270W
- Current - Continuous Drain (Id) @ 25°C :
- 38.8A Ta
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-3P-3, SC-65-3
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 200 ns
- Drain to Source Breakdown Voltage :
- 600V
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tube
- Supplier Device Package :
- TO-3P(N)
- Mount :
- Through Hole
- Series :
- DTMOSIV
- Rds On (Max) @ Id, Vgs :
- 65mOhm @ 19.4A, 10V
- Datasheets
- TK39J60W5,S1VQ
N-Channel Tube 65mOhm @ 19.4A, 10V ±30V 4100pF @ 300V 135nC @ 10V 600V TO-3P-3, SC-65-3
TK39J60W5,S1VQ Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4100pF @ 300V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 38.8A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [200 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 55mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
TK39J60W5,S1VQ Features
a continuous drain current (ID) of 38.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 200 ns
single MOSFETs transistor is 55mOhm
a 600V drain to source voltage (Vdss)
TK39J60W5,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK39J60W5,S1VQ applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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