TK39N60W,S1VF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Rds On Max :

65 mΩ

Resistance :

65mOhm

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

FET Type :

N-Channel

Input Capacitance :

4.1nF

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 300V

Series :

DTMOSIV

Capacitance :

4.1nF

Continuous Drain Current (ID) :

38.8A

Mount :

Through Hole

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

65mOhm @ 19.4A, 10V

Vgs(th) (Max) @ Id :

3.7V @ 1.9mA

Packaging :

Tube

Published :

2013

Factory Lead Time :

16 Weeks

Drain to Source Resistance :

55mOhm

Turn-Off Delay Time :

200 ns

Rise Time :

50ns

Min Operating Temperature :

-55°C

Power Dissipation-Max :

270W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

600V

FET Feature :

Super Junction

Fall Time (Typ) :

9 ns

Current - Continuous Drain (Id) @ 25°C :

38.8A Ta

Operating Temperature :

150°C TJ

Supplier Device Package :

TO-247

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V