TK39J60W,S1VQ
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- Mfr.Part #
- TK39J60W,S1VQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38.8A TO3P
- Stock
- 22
- In Stock ：
- 22
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Vgs(th) (Max) @ Id :
- 3.7V @ 1.9mA
- Factory Lead Time :
- 16 Weeks
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 600V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Package / Case :
- TO-3P-3, SC-65-3
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 19.4A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2013
- Power Dissipation :
- 270W
- Mount :
- Through Hole
- Number of Pins :
- 3
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 38.8A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 300V
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 38.8A
- Radiation Hardening :
- No
- FET Feature :
- Super Junction
- Power Dissipation-Max :
- 270W Tc
- Series :
- DTMOSIV
- Element Configuration :
- Single
- Datasheets
- TK39J60W,S1VQ
N-Channel Tube 65m Ω @ 19.4A, 10V ±30V 4100pF @ 300V 110nC @ 10V TO-3P-3, SC-65-3
TK39J60W,S1VQ Overview
A device's maximum input capacitance is 4100pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 38.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
TK39J60W,S1VQ Features
a continuous drain current (ID) of 38.8A
a drain-to-source breakdown voltage of 600V voltage
TK39J60W,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK39J60W,S1VQ applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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