TK39A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

38.8A Ta

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Weight :

6.000006g

Turn-Off Delay Time :

200 ns

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 300V

Number of Elements :

1

Radiation Hardening :

No

Power Dissipation-Max :

50W Tc

Packaging :

Tube

Avalanche Energy Rating (Eas) :

608 mJ

Drain-source On Resistance-Max :

0.065Ohm

Transistor Element Material :

SILICON

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

38.8A

Transistor Application :

SWITCHING

Element Configuration :

Single

DS Breakdown Voltage-Min :

600V

Fall Time (Typ) :

9 ns

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

65m Ω @ 19.4A, 10V

Mount :

Through Hole

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

50ns

Vgs (Max) :

±30V

Number of Channels :

1

Series :

DTMOSIV

Turn On Delay Time :

80 ns

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

3.7V @ 1.9mA

Published :

2012

Number of Pins :

3