TK39A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation-Max :

50W Tc

Series :

DTMOSIV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.7V @ 1.9mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 300V

Rds On (Max) @ Id, Vgs :

65m Ω @ 19.4A, 10V

Turn On Delay Time :

80 ns

Published :

2012

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

38.8A

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

38.8A Ta

Mount :

Through Hole

Turn-Off Delay Time :

200 ns

Package / Case :

TO-220-3 Full Pack

Rise Time :

50ns

Drain-source On Resistance-Max :

0.065Ohm

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

9 ns

Weight :

6.000006g

Packaging :

Tube

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

608 mJ

Vgs (Max) :

±30V

Element Configuration :

Single

Number of Pins :

3

Mounting Type :

Through Hole