TK39A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Avalanche Energy Rating (Eas) :

608 mJ

Vgs(th) (Max) @ Id :

3.7V @ 1.9mA

DS Breakdown Voltage-Min :

600V

Mounting Type :

Through Hole

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

65m Ω @ 19.4A, 10V

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Channels :

1

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

50W Tc

Current - Continuous Drain (Id) @ 25°C :

38.8A Ta

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 300V

Vgs (Max) :

±30V

Weight :

6.000006g

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

150°C TJ

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

80 ns

Mount :

Through Hole

Number of Elements :

1

Rise Time :

50ns

Transistor Application :

SWITCHING

Element Configuration :

Single

Series :

DTMOSIV

Turn-Off Delay Time :

200 ns

Radiation Hardening :

No

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Continuous Drain Current (ID) :

38.8A

Drain-source On Resistance-Max :

0.065Ohm