TK19A50W,S5X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

40W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

38 nC @ 10 V

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18.5A (Ta)

Input Capacitance (Ciss) (Max) @ Vds :

1350 pF @ 300 V

FET Type :

N-Channel

Tradename :

DTMOSIV

Minimum Operating Temperature :

- 55 C

Brand :

Toshiba

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

DTMOSIV

Supplier Device Package :

TO-220SIS

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-220-3 Full Pack

Channel Mode :

Enhancement

Product Status :

Active

Subcategory :

MOSFETs

RoHS :

Details

Drain to Source Voltage (Vdss) :

500 V

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.9A, 10V

Transistor Type :

1 N-Channel

Product Type :

MOSFET

FET Feature :

-

Packaging :

Tube

Operating Temperature :

150°C

Vgs (Max) :

±30V

Product Category :

MOSFET

Package :

Tube

Number of Channels :

1 Channel

Manufacturer :

Toshiba

Vgs(th) (Max) @ Id :

3.7V @ 790μA

Mounting Type :

Through Hole

Configuration :

Single

Rise Time :

25 ns

Mounting Style :

Through Hole