TK190E65Z,S1X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Package / Case :

TO-220-3

Operating Temperature :

150°C

Maximum Operating Temperature :

+ 150 C

Series :

-

Drain to Source Voltage (Vdss) :

650 V

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Supplier Device Package :

TO-220

Package :

Tube

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.5A, 10V

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Packaging :

Tube

Vgs (Max) :

±30V

FET Feature :

-

Product Category :

Toshiba

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 300 V

Manufacturer :

Toshiba

Power Dissipation (Max) :

130W (Tc)

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

4V @ 610µA

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Brand :

Toshiba