TK190U65Z,RQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

14 ns

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Drain to Source Voltage (Vdss) :

650 V

Width :

9.9 mm

Length :

10.38 mm

Brand :

Toshiba

Power Dissipation (Max) :

130W (Tc)

RoHS :

Details

Packaging :

MouseReel

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.5A, 10V

Supplier Device Package :

TOLL

Product Status :

Active

Configuration :

Single

Package :

Digi-Reel?

Number of Channels :

1 Channel

Product :

MOSFET

Vgs(th) (Max) @ Id :

4V @ 610µA

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Package / Case :

8-PowerSFN

Type :

Silicon N-Channel MOSFET

Mounting Type :

Surface Mount

Series :

DTMOSVI

Subcategory :

MOSFETs

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Toshiba

Operating Temperature :

150°C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 300 V

Product Type :

MOSFET

FET Type :

N-Channel

Vgs (Max) :

±30V

Height :

2.3 mm