TK190A65Z,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

TK190A65

Operating Temperature :

150°C

Technology :

Si

Minimum Operating Temperature :

- 55 C

Power Dissipation (Max) :

40W (Tc)

Series :

DTMOS VI

Packaging :

Tube

Rise Time :

19 ns

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Supplier Device Package :

TO-220SIS

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.5A, 10V

Product Type :

MOSFET

Product Status :

Active

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

FET Type :

N-Channel

Transistor Polarity :

N-Channel

RoHS :

Details

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 300 V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 610µA

Vgs (Max) :

±30V

Subcategory :

MOSFETs

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Manufacturer :

Toshiba

Brand :

Toshiba

Channel Mode :

Enhancement

Mounting Style :

Through Hole