TK190A65Z,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

650 V

Product Category :

MOSFET

Base Product Number :

TK190A65

Product Type :

MOSFET

Subcategory :

MOSFETs

Rise Time :

19 ns

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 300 V

Package / Case :

TO-220-3

Mounting Style :

Through Hole

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Through Hole

Brand :

Toshiba

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.5A, 10V

Configuration :

Single

FET Feature :

-

Transistor Type :

1 N-Channel

FET Type :

N-Channel

Technology :

Si

Package :

Tube

RoHS :

Details

Power Dissipation (Max) :

40W (Tc)

Product Status :

Active

Manufacturer :

Toshiba

Vgs(th) (Max) @ Id :

4V @ 610µA

Transistor Polarity :

N-Channel

Packaging :

Tube

Series :

DTMOS VI

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Vgs (Max) :

±30V

Operating Temperature :

150°C

Supplier Device Package :

TO-220SIS

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Channels :

1 Channel