TK190A65Z,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

19 ns

Transistor Type :

1 N-Channel

Technology :

Si

Configuration :

Single

Package / Case :

TO-220-3

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Supplier Device Package :

TO-220SIS

Package :

Tube

Manufacturer :

Toshiba

FET Type :

N-Channel

Vgs (Max) :

±30V

Power Dissipation (Max) :

40W (Tc)

Vgs(th) (Max) @ Id :

4V @ 610µA

Drain to Source Voltage (Vdss) :

650 V

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 300 V

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Packaging :

Tube

RoHS :

Details

Drive Voltage (Max Rds On, Min Rds On) :

10V

Brand :

Toshiba

Subcategory :

MOSFETs

Base Product Number :

TK190A65

Operating Temperature :

150°C

Product Status :

Active

Product Category :

MOSFET

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Series :

DTMOS VI

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)