TK190A65Z,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Series :

DTMOS VI

Rise Time :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Mounting Style :

Through Hole

Configuration :

Single

FET Type :

N-Channel

Manufacturer :

Toshiba

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

RoHS :

Details

Operating Temperature :

150°C

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

4V @ 610µA

Product Category :

MOSFET

Technology :

Si

Transistor Type :

1 N-Channel

Packaging :

Tube

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

1370 pF @ 300 V

Supplier Device Package :

TO-220SIS

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

FET Feature :

-

Subcategory :

MOSFETs

Package / Case :

TO-220-3

Base Product Number :

TK190A65

Drain to Source Voltage (Vdss) :

650 V

Vgs (Max) :

±30V

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.5A, 10V

Brand :

Toshiba

Mounting Type :

Through Hole

Power Dissipation (Max) :

40W (Tc)

Product Status :

Active

Transistor Polarity :

N-Channel