TK19A45D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

π-MOSVII

Continuous Drain Current (ID) :

19A

Rise Time :

50ns

Factory Lead Time :

16 Weeks

Input Capacitance :

2.6nF

Published :

2009

Number of Pins :

3

Mounting Type :

Through Hole

Rds On Max :

250 mΩ

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Supplier Device Package :

TO-220SIS

Power Dissipation-Max :

50W Tc

Operating Temperature :

150°C TJ

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

250mOhm @ 9.5A, 10V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Drain to Source Voltage (Vdss) :

450V

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

FET Type :

N-Channel

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V