TK19A45D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Fall Time (Typ) :

25 ns

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Supplier Device Package :

TO-220SIS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

250mOhm @ 9.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Rise Time :

50ns

Mount :

Through Hole

Rds On Max :

250 mΩ

Number of Pins :

3

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

450V

Operating Temperature :

150°C TJ

Published :

2009

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Max Operating Temperature :

150°C

Input Capacitance :

2.6nF

Continuous Drain Current (ID) :

19A

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Power Dissipation-Max :

50W Tc

Series :

π-MOSVII