TIP147TU
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- Mfr.Part #
- TIP147TU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A TO3PN
- Stock
- 5,463
- In Stock ：
- 5,463
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 2mA
- Polarity :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 10A
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Base Part Number :
- TIP147
- Current Rating :
- -10A
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 12 Weeks
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 10A
- hFE Min :
- 1000
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 80W
- Weight :
- 6.401g
- Transistor Type :
- PNP - Darlington
- Operating Temperature :
- 150°C TJ
- Width :
- 6.35mm
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 6.35mm
- Package / Case :
- TO-3P-3, SC-65-3
- Collector Emitter Saturation Voltage :
- 2V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Power Dissipation :
- 80W
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -100V
- Height :
- 6.35mm
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage - Rated DC :
- -100V
- Datasheets
- TIP147TU
PNP - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-3P-3, SC-65-3 Tube Through Hole
TIP147TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 10A volts.
TIP147TU Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
TIP147TU Applications
There are a lot of ON Semiconductor
TIP147TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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