TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 46,930
- In Stock ：
- 46,930
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 6.35mm
- Number of Pins :
- 3
- Published :
- 2000
- Weight :
- 4.535924g
- Packaging :
- Tube
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN - Darlington
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Collector Emitter Saturation Voltage :
- 2V
- Current Rating :
- 8A
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Voltage - Rated DC :
- 80V
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 8A
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Length :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50μA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Power Dissipation :
- 80W
- Polarity :
- NPN
- Base Part Number :
- TIP10*
- Width :
- 25.4mm
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- hFE Min :
- 200
- Collector Emitter Breakdown Voltage :
- 80V
- REACH SVHC :
- No SVHC
- Datasheets
- TIP101
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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