TIP101G

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Mfr.Part #
TIP101G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Power Dissipation :
80W
Case Connection :
COLLECTOR
Published :
2000
Operating Temperature :
-65°C~150°C TJ
Number of Elements :
1
hFE Min :
200
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Saturation Voltage :
2V
Current Rating :
8A
Voltage - Rated DC :
80V
Package / Case :
TO-220-3
Length :
6.35mm
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Number of Pins :
3
Packaging :
Tube
Terminal Finish :
Tin (Sn)
Factory Lead Time :
2 Weeks
Emitter Base Voltage (VEBO) :
5V
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
2W
Radiation Hardening :
No
Weight :
4.535924g
Height :
6.35mm
Pin Count :
3
Number of Terminations :
3
Width :
25.4mm
Transistor Element Material :
SILICON
Transistor Type :
NPN - Darlington
Pbfree Code :
yes
Max Collector Current :
8A
Element Configuration :
Single
Current - Collector Cutoff (Max) :
50μA
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
AMPLIFIER
Base Part Number :
TIP10*
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Collector Base Voltage (VCBO) :
80V
Polarity :
NPN
ECCN Code :
EAR99
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Datasheets
TIP101G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP101G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Base Part Number:TIP10*, Mounting Type:Through Hole, TIP101G pinout, TIP101G datasheet PDF, TIP101G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP101G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP101G


NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP101G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.

TIP101G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


TIP101G Applications


There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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