TIP101G
- Mfr.Part #
- TIP101G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Power Dissipation :
- 80W
- Case Connection :
- COLLECTOR
- Published :
- 2000
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- 2V
- Current Rating :
- 8A
- Voltage - Rated DC :
- 80V
- Package / Case :
- TO-220-3
- Length :
- 6.35mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Pins :
- 3
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Height :
- 6.35mm
- Pin Count :
- 3
- Number of Terminations :
- 3
- Width :
- 25.4mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN - Darlington
- Pbfree Code :
- yes
- Max Collector Current :
- 8A
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- TIP10*
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Polarity :
- NPN
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Datasheets
- TIP101G

NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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