TIP101G

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Mfr.Part #
TIP101G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
8A
Current Rating :
8A
Time@Peak Reflow Temperature-Max (s) :
40
Voltage - Rated DC :
80V
Lead Free :
Lead Free
Operating Temperature :
-65°C~150°C TJ
Polarity :
NPN
JEDEC-95 Code :
TO-220AB
Max Power Dissipation :
2W
Current - Collector Cutoff (Max) :
50μA
Transistor Application :
AMPLIFIER
Number of Pins :
3
Collector Emitter Saturation Voltage :
2V
Pbfree Code :
yes
Radiation Hardening :
No
Mounting Type :
Through Hole
Power Dissipation :
80W
REACH SVHC :
No SVHC
Weight :
4.535924g
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Published :
2000
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
80V
Factory Lead Time :
2 Weeks
Transistor Type :
NPN - Darlington
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Surface Mount :
No
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Base Part Number :
TIP10*
Number of Elements :
1
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
hFE Min :
200
Peak Reflow Temperature (Cel) :
260
Collector Emitter Voltage (VCEO) :
80V
Number of Terminations :
3
Width :
25.4mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Package / Case :
TO-220-3
Collector Base Voltage (VCBO) :
80V
Length :
6.35mm
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
5V
Height :
6.35mm
Datasheets
TIP101G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP101G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:TIP10*, Number of Terminations:3, Package / Case:TO-220-3, TIP101G pinout, TIP101G datasheet PDF, TIP101G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP101G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP101G


NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP101G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.

TIP101G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


TIP101G Applications


There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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