TIP101G
- Mfr.Part #
- TIP101G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 8A
- Current Rating :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~150°C TJ
- Polarity :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Power Dissipation :
- 80W
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN - Darlington
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Base Part Number :
- TIP10*
- Number of Elements :
- 1
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 200
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Width :
- 25.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 80V
- Length :
- 6.35mm
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 6.35mm
- Datasheets
- TIP101G

NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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