TIP147T

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Mfr.Part #
TIP147T
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 100V 10A TO220-3
Stock
1,420
In Stock :
1,420

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Width :
4.6mm
Collector Emitter Breakdown Voltage :
100V
Packaging :
Tube
Voltage - Rated DC :
-100V
Length :
10.4mm
Number of Elements :
1
Power Dissipation :
90W
Number of Terminations :
3
Height :
9.15mm
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
100V
VCEsat-Max :
3 V
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Transistor Type :
PNP - Darlington
Weight :
6.000006g
Transistor Application :
SWITCHING
hFE Min :
500
Current Rating :
-10A
Package / Case :
TO-220-3
Terminal Finish :
Matte Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
8 Weeks
Mount :
Through Hole
Polarity :
PNP
Collector Emitter Saturation Voltage :
2V
Number of Pins :
3
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 4V
Element Configuration :
Single
Max Collector Current :
10A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
2mA
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 10A
Pin Count :
3
Radiation Hardening :
No
Base Part Number :
TIP147
Collector Emitter Voltage (VCEO) :
100V
JESD-609 Code :
e3
Max Power Dissipation :
90W
REACH SVHC :
No SVHC
Datasheets
TIP147T
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP147T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:TIP147, TIP147T pinout, TIP147T datasheet PDF, TIP147T amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP147T ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP147T


PNP - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP147T Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 4V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 40mA, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.A maximum collector current of 10A volts can be achieved.

TIP147T Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A


TIP147T Applications


There are a lot of STMicroelectronics
TIP147T applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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