TIP147G
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- Mfr.Part #
- TIP147G
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 10A TO247-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 10A
- Max Power Dissipation :
- 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 125W
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP - Darlington
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 6.500007g
- Number of Elements :
- 1
- Current Rating :
- -10A
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 2V
- Terminal Finish :
- Tin (Sn)
- Published :
- 2000
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Lead Free :
- Lead Free
- Height :
- 12.2mm
- Surface Mount :
- No
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Width :
- 4.9mm
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 2mA
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 10A
- Polarity :
- PNP
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -100V
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 4MHz
- Length :
- 15.2mm
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Base Part Number :
- TIP14*
- Element Configuration :
- Single
- Datasheets
- TIP147G
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
TIP147G Overview
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP147G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 4MHz
TIP147G Applications
There are a lot of ON Semiconductor
TIP147G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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