TIP147FTU

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Mfr.Part #
TIP147FTU
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS PNP DARL 100V 10A TO3PF
Stock
7,018
In Stock :
7,018

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity :
PNP
Height :
16.7mm
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
2mA
hFE Min :
1000
Number of Elements :
1
Case Connection :
Isolated
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
100V
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
-100V
Element Configuration :
Single
JESD-609 Code :
e3
Max Power Dissipation :
125W
Number of Terminations :
3
Current Rating :
-2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 4V
Voltage - Rated DC :
-100V
Factory Lead Time :
2 Weeks
Emitter Base Voltage (VEBO) :
-5V
Published :
2002
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Transistor Element Material :
SILICON
Packaging :
Tube
Package / Case :
TO-3P-3 Full Pack
Power - Max :
125W
Max Collector Current :
10A
Length :
15.7mm
Transistor Type :
PNP - Darlington
Weight :
6.962g
Collector Emitter Voltage (VCEO) :
100V
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 10A
Base Part Number :
TIP147
Width :
5.7mm
Collector Emitter Saturation Voltage :
2V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Terminal Finish :
Tin (Sn)
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Datasheets
TIP147FTU
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP147FTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-3P-3 Full Pack, Base Part Number:TIP147, Mounting Type:Through Hole, Operating Temperature:150°C TJ, TIP147FTU pinout, TIP147FTU datasheet PDF, TIP147FTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP147FTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP147FTU


PNP - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-3P-3 Full Pack Tube Through Hole

TIP147FTU Overview


In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 10A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

TIP147FTU Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -2A


TIP147FTU Applications


There are a lot of ON Semiconductor
TIP147FTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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