TIP142G
- Mfr.Part #
- TIP142G
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A TO247-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 4MHz
- Number of Pins :
- 3
- Width :
- 5.3086mm
- Continuous Collector Current :
- 10A
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- hFE Min :
- 1000
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 hours ago)
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 125W
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN - Darlington
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Published :
- 2000
- Radiation Hardening :
- No
- Max Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 100V
- Packaging :
- Tube
- Height :
- 21.082mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 10A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 125W
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Base Part Number :
- TIP14*
- ECCN Code :
- EAR99
- Current Rating :
- 10A
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 16.256mm
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 2mA
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Package / Case :
- TO-247-3
- Datasheets
- TIP142G

NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
TIP142G Overview
DC current gain in this device equals 1000 @ 5A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 10A.Single BJT transistor is essential to maintain the continuous collector voltage at 10A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 10A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 10A volts.
TIP142G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 4MHz
TIP142G Applications
There are a lot of ON Semiconductor
TIP142G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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