TIP141G
- Mfr.Part #
- TIP141G
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO247-3
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 4.9mm
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 2mA
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Published :
- 2002
- Length :
- 15.2mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Height :
- 12.2mm
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 125W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 10A
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Max Power Dissipation :
- 125W
- Max Collector Current :
- 10A
- Current Rating :
- 10A
- Weight :
- 6.500007g
- Transition Frequency :
- 4MHz
- hFE Min :
- 1000
- Polarity :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Saturation Voltage :
- 2V
- Mounting Type :
- Through Hole
- Base Part Number :
- TIP14*
- Datasheets
- TIP141G

NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
TIP141G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 5A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 10A volts.
TIP141G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 4MHz
TIP141G Applications
There are a lot of ON Semiconductor
TIP141G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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