TIP141
- Mfr.Part #
- TIP141
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO218
- Stock
- 819
- In Stock :
- 819
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 4MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- hFE Min :
- 1000
- Height :
- 12.2mm
- Transistor Type :
- NPN - Darlington
- Length :
- 15.2mm
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 80V
- Polarity :
- NPN
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 125W
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Weight :
- 6.500007g
- Max Power Dissipation :
- 125W
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- 80V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 2mA
- Max Collector Current :
- 10A
- REACH SVHC :
- No SVHC
- Base Part Number :
- TIP14*
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 10A
- Package / Case :
- TO-247-3
- Width :
- 4.9mm
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 10A
- Datasheets
- TIP141

NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
TIP141G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 5A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 10A volts.
TIP141G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 4MHz
TIP141G Applications
There are a lot of ON Semiconductor
TIP141G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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