TIP126TU
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- Mfr.Part #
- TIP126TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 5A TO220-3
- Stock
- 5,484
- In Stock ：
- 5,484
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 20mA, 5A
- Factory Lead Time :
- 5 Weeks
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2008
- Power Dissipation :
- 2W
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.214g
- Number of Pins :
- 3
- Length :
- 10.67mm
- JESD-609 Code :
- e3
- Max Collector Current :
- 5A
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tube
- Base Part Number :
- TIP126
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Height :
- 9.4mm
- Current - Collector Cutoff (Max) :
- 2mA
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 2W
- Number of Elements :
- 1
- Width :
- 4.83mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 80V
- Voltage - Rated DC :
- -80V
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Transistor Type :
- PNP - Darlington
- Polarity :
- PNP
- Current Rating :
- -5A
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 3V
- hFE Min :
- 1000
- Collector Base Voltage (VCBO) :
- -80V
- Transistor Element Material :
- SILICON
- Datasheets
- TIP126TU
PNP - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP126TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 5A volts.
TIP126TU Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at -5V
the current rating of this device is -5A
TIP126TU Applications
There are a lot of ON Semiconductor
TIP126TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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