TIP126G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

REACH SVHC :

No SVHC

Length :

10.2616mm

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

80V

Power Dissipation :

65W

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

5A

hFE Min :

1000

Polarity :

PNP

Collector Emitter Saturation Voltage :

2V

Max Power Dissipation :

2W

Pin Count :

3

Terminal Finish :

Tin (Sn)

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Packaging :

Tube

Voltage - Rated DC :

-80V

Emitter Base Voltage (VEBO) :

5V

Height :

15.748mm

Collector Emitter Voltage (VCEO) :

80V

Element Configuration :

Single

Base Part Number :

TIP12*

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Type :

PNP - Darlington

Mounting Type :

Through Hole

Number of Pins :

3

Number of Elements :

1

JESD-609 Code :

e3

Gain Bandwidth Product :

4MHz

Weight :

4.535924g

Collector Base Voltage (VCBO) :

80V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.826mm

Continuous Collector Current :

5A

Surface Mount :

No

Factory Lead Time :

2 Weeks

Published :

2005

JEDEC-95 Code :

TO-220AB

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Pbfree Code :

yes

Current Rating :

-5A

Current - Collector Cutoff (Max) :

500μA

Radiation Hardening :

No