TIP126
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- Mfr.Part #
- TIP126
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 5A TO220-3
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Surface Mount :
- No
- Height :
- 15.748mm
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 1000
- Published :
- 2005
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.826mm
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- TIP12*
- Lead Free :
- Lead Free
- Current Rating :
- -5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- -80V
- Continuous Collector Current :
- 5A
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Transistor Type :
- PNP - Darlington
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power Dissipation :
- 65W
- Max Collector Current :
- 5A
- REACH SVHC :
- No SVHC
- Length :
- 10.2616mm
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 3V
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 20mA, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Polarity :
- PNP
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- Packaging :
- Tube
- Datasheets
- TIP126
PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP126G Overview
In this device, the DC current gain is 1000 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
TIP126G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
TIP126G Applications
There are a lot of ON Semiconductor
TIP126G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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