TIP126
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- Mfr.Part #
- TIP126
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 5A TO220-3
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.2616mm
- Weight :
- 4.535924g
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 2V
- JESD-609 Code :
- e3
- Transistor Type :
- PNP - Darlington
- Polarity :
- PNP
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 5A
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- -80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 500μA
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Height :
- 15.748mm
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 20mA, 5A
- Current Rating :
- -5A
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Continuous Collector Current :
- 5A
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 3V
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Gain Bandwidth Product :
- 4MHz
- hFE Min :
- 1000
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- TIP12*
- Power Dissipation :
- 65W
- Width :
- 4.826mm
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Datasheets
- TIP126
PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP126G Overview
In this device, the DC current gain is 1000 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
TIP126G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
TIP126G Applications
There are a lot of ON Semiconductor
TIP126G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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