TIP125TU

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Mfr.Part #
TIP125TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 60V 5A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
2mA
Power Dissipation :
2W
Factory Lead Time :
6 Weeks
Emitter Base Voltage (VEBO) :
-5V
Operating Temperature :
150°C TJ
Base Part Number :
TIP125
Transistor Type :
PNP - Darlington
Current Rating :
-5A
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
2V
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
60V
hFE Min :
1000
Transistor Element Material :
SILICON
Number of Elements :
1
Polarity :
PNP
Vce Saturation (Max) @ Ib, Ic :
4V @ 20mA, 5A
Number of Terminations :
3
Max Collector Current :
5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Width :
4.83mm
Length :
10.67mm
Lifecycle Status :
LIFETIME (Last Updated: 2 days ago)
Mount :
Through Hole
Published :
2008
Weight :
1.214g
Max Power Dissipation :
65W
Height :
16.51mm
Lead Free :
Lead Free
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 3V
JEDEC-95 Code :
TO-220AB
Number of Pins :
3
ECCN Code :
EAR99
Voltage - Rated DC :
-60V
Package / Case :
TO-220-3
Terminal Finish :
Tin (Sn)
Collector Base Voltage (VCBO) :
-60V
Collector Emitter Voltage (VCEO) :
60V
JESD-609 Code :
e3
Packaging :
Tube
Element Configuration :
Single
Datasheets
TIP125TU
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP125TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:TIP125, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, TIP125TU pinout, TIP125TU datasheet PDF, TIP125TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP125TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP125TU


PNP - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP125TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 20mA, 5A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.Collector current can be as low as 5A volts at its maximum.

TIP125TU Features


the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at -5V
the current rating of this device is -5A


TIP125TU Applications


There are a lot of ON Semiconductor
TIP125TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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