TIP125G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

2 Weeks

Length :

15.75mm

Terminal Finish :

Tin (Sn)

Published :

2005

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

REACH SVHC :

No SVHC

Voltage - Rated DC :

-60V

Polarity :

PNP

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

60V

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Collector Emitter Saturation Voltage :

2V

Transistor Element Material :

SILICON

Power Dissipation :

65W

Continuous Collector Current :

5A

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Width :

10.28mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Transistor Type :

PNP - Darlington

Power - Max :

2W

Operating Temperature :

-65°C~150°C TJ

Pin Count :

3

Current Rating :

-5A

Current - Collector Cutoff (Max) :

500μA

Number of Elements :

1

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Case Connection :

COLLECTOR

Max Collector Current :

5A

Surface Mount :

No

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tube

Height :

4.82mm

Collector Emitter Voltage (VCEO) :

60V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Base Part Number :

TIP12*

hFE Min :

1000

Package / Case :

TO-220-3

Transistor Application :

AMPLIFIER

Max Power Dissipation :

65W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes