TIP122TU

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Mfr.Part #
TIP122TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 5A TO220-3
Stock
19,492
In Stock :
19,492

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
1000
Mount :
Through Hole
Voltage - Rated DC :
100V
Vce Saturation (Max) @ Ib, Ic :
4V @ 20mA, 5A
Radiation Hardening :
No
JESD-609 Code :
e3
Packaging :
Tube
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
3
Mounting Type :
Through Hole
Base Part Number :
TIP122
Polarity :
NPN
Collector Emitter Breakdown Voltage :
100V
Max Collector Current :
5A
Element Configuration :
Single
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
100V
Transistor Type :
NPN - Darlington
Width :
4.83mm
Published :
2008
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 3V
Lead Free :
Lead Free
Weight :
1.214g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
9.4mm
Current Rating :
5A
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
100V
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Power - Max :
2W
Pbfree Code :
yes
Package / Case :
TO-220-3
Length :
10.67mm
Current - Collector Cutoff (Max) :
500μA
Power Dissipation :
65W
Factory Lead Time :
4 Weeks
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Collector Emitter Saturation Voltage :
2V
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
Number of Pins :
3
Max Power Dissipation :
65W
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Datasheets
TIP122TU
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP122TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:TIP122, Package / Case:TO-220-3, Operating Temperature:150°C TJ, Number of Pins:3, TIP122TU pinout, TIP122TU datasheet PDF, TIP122TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP122TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP122TU


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP122TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 5A volts.

TIP122TU Features


the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A


TIP122TU Applications


There are a lot of ON Semiconductor
TIP122TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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