TIP122G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

500μA

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Transistor Type :

NPN - Darlington

Operating Temperature :

-65°C~150°C TJ

hFE Min :

1000

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Element Configuration :

Single

Width :

4.826mm

Polarity :

NPN

Surface Mount :

No

Pin Count :

3

Transistor Element Material :

SILICON

Base Part Number :

TIP12*

Mounting Type :

Through Hole

ECCN Code :

EAR99

Current Rating :

5A

Transistor Application :

AMPLIFIER

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Collector Base Voltage (VCBO) :

100V

Radiation Hardening :

No

Number of Terminations :

3

Collector Emitter Saturation Voltage :

2V

Package / Case :

TO-220-3

Transition Frequency :

4MHz

Collector Emitter Voltage (VCEO) :

100V

Power Dissipation :

65W

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

Number of Pins :

3

Max Power Dissipation :

2W

Contact Plating :

Tin

Lead Free :

Lead Free

Height :

15.748mm

Continuous Collector Current :

5A

Collector Emitter Breakdown Voltage :

100V

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Length :

10.2616mm

Published :

2005

Max Collector Current :

5A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Voltage - Rated DC :

100V