TIP121G
- Mfr.Part #
- TIP121G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 5A TO220
- Stock
- 205
- In Stock :
- 205
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 5A
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Max Collector Current :
- 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- TIP12*
- Lead Free :
- Lead Free
- Transistor Type :
- NPN - Darlington
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 65W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 1997
- hFE Min :
- 1000
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 80V
- Collector Emitter Saturation Voltage :
- 2V
- Length :
- 10.2616mm
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Polarity :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 20mA, 5A
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Continuous Collector Current :
- 5A
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- No
- Width :
- 4.826mm
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 2W
- JEDEC-95 Code :
- TO-220AB
- Current - Collector Cutoff (Max) :
- 500μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 3V
- Height :
- 15.748mm
- Number of Terminations :
- 3
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Datasheets
- TIP121G

NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP121G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 20mA, 5A.In order to achieve high efficiency, the continuous collector voltage should be kept at 5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Collector current can be as low as 5A volts at its maximum.
TIP121G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
TIP121G Applications
There are a lot of ON Semiconductor
TIP121G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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