TIP117G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

1000

Element Configuration :

Single

Surface Mount :

No

Factory Lead Time :

8 Weeks

Width :

4.826mm

Lead Free :

Lead Free

Base Part Number :

TIP11*

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Collector Emitter Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Continuous Collector Current :

2A

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Number of Elements :

1

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A 4V

Power Dissipation :

2W

Current Rating :

-2A

JESD-609 Code :

e3

Transistor Type :

PNP - Darlington

Pin Count :

3

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

2.5V

Weight :

4.535924g

JEDEC-95 Code :

TO-220AB

Transition Frequency :

25MHz

Max Collector Current :

2A

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-220-3

Case Connection :

COLLECTOR

Length :

10.2616mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

100V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 8mA, 2A

Packaging :

Tube

Voltage - Rated DC :

-100V

Transistor Application :

AMPLIFIER

Height :

15.748mm

Radiation Hardening :

No

Contact Plating :

Tin

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

100V

Max Power Dissipation :

2W

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

2mA