TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220-3
- Stock
- 9,265
- In Stock ：
- 9,265
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Width :
- 4.826mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 8 Weeks
- hFE Min :
- 1000
- Current - Collector Cutoff (Max) :
- 2mA
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-220-3
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Base Part Number :
- TIP11*
- Voltage - Rated DC :
- -100V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Current Rating :
- -2A
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity :
- NPN
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Pin Count :
- 3
- Contact Plating :
- Tin
- Transition Frequency :
- 25MHz
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2.5V
- Continuous Collector Current :
- 2A
- Length :
- 10.2616mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 2W
- Height :
- 15.748mm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- TIP117
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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