TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220
- Stock
- 420
- In Stock ：
- 420
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 15.748mm
- Emitter Base Voltage (VEBO) :
- 5V
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- -100V
- Pbfree Code :
- yes
- Max Collector Current :
- 2A
- Base Part Number :
- TIP11*
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP - Darlington
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- -2A
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 2mA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- hFE Min :
- 1000
- Weight :
- 4.535924g
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Packaging :
- Tube
- Width :
- 4.826mm
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Polarity :
- NPN
- Continuous Collector Current :
- 2A
- Length :
- 10.2616mm
- Number of Pins :
- 3
- Transition Frequency :
- 25MHz
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Datasheets
- TIP117
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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