TIP116

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 8mA, 2A

hFE Min :

500

Lead Free :

Lead Free

Max Collector Current :

2A

Collector Emitter Saturation Voltage :

2.5V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Pbfree Code :

yes

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current - Collector Cutoff (Max) :

2mA

Current Rating :

-2A

Collector Emitter Voltage (VCEO) :

80V

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

80V

Voltage - Rated DC :

-80V

Transistor Type :

PNP - Darlington

Element Configuration :

Single

Operating Temperature :

-65°C~150°C TJ

Base Part Number :

TIP11*

Factory Lead Time :

2 Weeks

Published :

2007

Transistor Element Material :

SILICON

Surface Mount :

No

Max Power Dissipation :

2W

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A 4V

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Case Connection :

COLLECTOR

Pin Count :

3

Power Dissipation :

2W

Packaging :

Tube

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Package / Case :

TO-220-3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)