TIP115G
- Mfr.Part #
- TIP115G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 2A TO220
- Stock
- 6,667
- In Stock :
- 6,667
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 2mA
- Max Power Dissipation :
- 2W
- Base Part Number :
- TIP11*
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Width :
- 4.826mm
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Packaging :
- Tube
- Surface Mount :
- No
- Max Collector Current :
- 2A
- Current Rating :
- 7.4A
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -60V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP - Darlington
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Length :
- 10.2616mm
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2.5V
- Continuous Collector Current :
- 2A
- Published :
- 2005
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Height :
- 15.748mm
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- TIP115G

PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP115G Description
The ON Semiconductor TIP115G is a Medium Power NPN Darlington Bipolar Power Transistor. Its complementary silicon transistor is TIP110G.
TIP115G Features
-
High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
-
Collector-Emitter Sustaining Voltage @ 30 mA
-
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
-
Low Collector-Emitter Saturation Voltage
-
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
-
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
-
Compact TO-220 AB Package
-
Pb-Free Packages are Available
TIP115G Applications
-
General-purpose amplifier
-
Low-speed switching
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